MT52L512M64D4GN-107 WT ES:B TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR3
Memory Size:	32Gb (512M x 64)
Clock Frequency:	933MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.2V
Operating Temperature:	-30°C ~ 85°C (TC)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MT52L512M64D4GN-107 WT ES:B TR is a low-power 512Mbit (64M x 8/32M x 16/16M x 32) pseudo-static random access memory (PSRAM). It is a type of integrated circuit memory that uses a combination of dynamic RAM (DRAM) cells and static RAM (SRAM) cells to achieve the high density and low power operation. This memory is ideal for a wide range of applications, from embedded microcontroller memory to industrial medical applications.MT52L512M64D4GN-107 WT ES:B TR delivers a cost-effective, high-speed memory solution with low-power consumption. It offers a variety of features and benefits that make it well suited for use in embedded and industrial small-to-medium programs. These features include higher speed and performance, low power consumption and low operating current, and minimal power down currents during hibernation mode. The MT52L512M64D4GN-107 WT ES:B TR has been designed to meet the harsh environmental requirements of many industrial, medical, and automotive programs. It offers superior resistance to temperature, vibration, surge, and external noise interference. The device also implements various safety features, such as redundant checksums, triple ECC and parity bits, parity and chip-level protection, and manufacturing quality grade design. The MT52L512M64D4GN-107 WT ES:B TR has also been designed with a variety of interface support, including both data width and pin-out configurations. It features x8, x16 and x32 bit data widths, as well as 3.3V, 1.8V, 1.5V and 1.2V operating voltages. The MT52L512M64D4GN-107 WT ES:B TR can be used in a variety of embedded and industrial applications due to its low-power and high-performance capabilities. It can be used in applications such as digital cameras and other imaging equipment, industrial motor control systems, medical devices, automotive infotainment and navigation systems, and embedded microcontroller systems. Additional applications include general industrial automation systems, home security systems, retail point-of-sale systems, and gaming systems. In addition, it can be used as a high-speed boot device in controllers or base station flash memory.The MT52L512M64D4GN-107 WT ES:B TR uses a combination of dynamic RAM (DRAM) cells and static RAM (SRAM) cells to achieve high density and low power operation. The DRAM cells contain one transistor while the SRAM cells contain six transistors. The DRAM cells are used to store data while the SRAM cells are used to retrieve the stored data. The device uses an address decoder to determine which memory cell is being accessed, so that the data can be written to and read from the appropriate memory location. The device also utilizes Sense Amplifiers and Boosters to transfer the charges from the DRAM cells to the SRAM cells. This ensures that the data is transferred quickly and accurately. The MT52L512M64D4GN-107 WT ES:B TR is designed with a variety of interface support, including both data width and pin-out configurations. The device can be programmed with x8, x16, and x32 bit data widths. It can also operate at 3.3V, 1.8V, 1.5V, and 1.2V operating voltages. It also features triple ECC and parity bits, parity and chip-level protection, and thermal management features.The MT52L512M64D4GN-107 WT ES:B TR is a low-power 512Mbit (64M x 8/32M x 16/16M x 32) pseudo-static random access memory (PSRAM) that is well suited for embedded and industrial small-to-medium applications. It offers a variety of features and benefits, such as higher speed and performance, low power consumption and minimal power down currents during hibernation mode. It also offers superior resistance to temperature, vibration, surge, and external noise interference. In addition, the device can be interfaced with an x8, x16 and x32 bit data width and 3.3V, 1.8V, 1.5V and 1.2V operating voltages. Overall, the MT52L512M64D4GN-107 WT ES:B TR is an ideal solution for a wide range of memory applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description