
Allicdata Part #: | MT52L256M64D2PP-107WT:BTR-ND |
Manufacturer Part#: |
MT52L256M64D2PP-107 WT:B TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 16G 933MHZ FBGA |
More Detail: | SDRAM - Mobile LPDDR3 Memory IC 16Gb (256M x 64) ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR3 |
Memory Size: | 16Gb (256M x 64) |
Clock Frequency: | 933MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | -- |
Voltage - Supply: | 1.2V |
Operating Temperature: | -30°C ~ 85°C (TC) |
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Memory is an important part of a computer system, playing a vital role in storing data for use by both the hardware and software. MT52L256M64D2PP-107 WT:B TR is a type of memory dedicated to application field and working principle. It is a random-access memory (RAM) which comes in the form of integrated circuits (ICs).
As an integrated circuit, MT52L256M64D2PP-107 WT:B TR is a chip built onto a substrate commonly known as a printed circuit board (PCB). This chip is comprised of a single DDR2 DRAM device, with a memory address bus, a data bus, and control signals. The DDR2 DRAM device is used to store digital data and allow quick access to it. This chip is used in a variety of applications such as high-performance computers, storage devices, counter registers, and in communication systems.
In terms of application field and working principle of MT52L256M64D2PP-107 WT:B TR, the DDR2 DRAM device can be used to store large amounts of data and allow quick access to it. It also has relatively low power consumption and low heat dissipation. This makes it ideal for use in applications that require high-speed, reliable data access and storage. The DDR2 DRAM device also comes in multiple configurations, making it flexible for a variety of applications.
The MT52L256M64D2PP-107 WT:B TR can be used to store up to four megabytes of data. It does this through a series of self-refreshing cells that are interconnected. These cells are arranged in a grid-like structure and hold about four bits of data each. This data is stored in the form of a charge or voltage, and can be retrieved quickly by applying a voltage or current to the cells.
In order to access the data stored in the MT52L256M64D2PP-107 WT:B TR, a series of control signals need to be sent to the device. These signals can be generated internally, or externally. Internally, the DRAM device has a row address strobe (RAS), a column address strobe (CAS), and a clock. These signals are used to access data from the cells. Externally, the DRAM device can be interfaced with a microprocessor or other device.
The DRAM device can be used in a number of ways in order to provide the memory necessary for different applications. It can be used as a cache, a main memory, or a combination of both. In a cache, the DRAM device is used to store recently used data that can be accessed quickly. In a main memory, the DRAM device is used to store large amounts of data for long-term use.
When used for memory applications, the DRAM device is typically used in conjunction with a memory controller. The memory controller acts as the interface between the DRAM device and the CPU or other devices. The memory controller is responsible for managing all of the signals that are sent to and from the DRAM device, as well as managing the data that is stored within it. The memory controller also helps to improve performance, since it can be used to optimize data access times.
In short, the MT52L256M64D2PP-107 WT:B TR is a type of random-access memory (RAM) chip used in a variety of applications where large amounts of data need to be stored and accessed quickly. It is flexible and efficient, making it ideal for use in high-performance applications. The DRAM device is typically used in conjunction with a memory controller, which helps to manage signals sent to and from the DRAM device, and assist in data access.
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MT52L512M64D4GN-107 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 933MHZ FBGASD... |
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