MTP20N15E Allicdata Electronics
Allicdata Part #:

MTP20N15E-ND

Manufacturer Part#:

MTP20N15E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 150V 20A TO-220AB
More Detail: N-Channel 150V 20A (Tc) 112W (Tc) Through Hole TO-...
DataSheet: MTP20N15E datasheetMTP20N15E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 112W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1627pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55.9nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MTP20N15E is a type of field-effect transistor (FET) designed for high voltage applications. It is a widely used type of transistor in many industrial applications and can be found in a variety of equipment ranging from automotive electronics to medical imaging. It is a simple three terminal semiconductor switch that is widely used due to its low on-resistance and high breakdown voltage. The MTP20N15E operates by using a metal-oxide-semiconductor field-effect transistor (MOSFET) as its switching element. The operation of this type of transistor is reliant upon the flow of current that is due to differences in electrical potential. The metal gate is electrically biased and typically the electrical charge from this gate is the sole controlling factor in the behavior of the transistor.

The MTP20N15E is best used when applications require high voltage and fast switching. This device is an enhancement mode MOSFET which has the ability to switch quickly and handle a higher voltage than other FETs. It is commonly used in motor control, power switching and other power management applications. Typically these types of FETs are rated for voltages from 200V to 600V and can handle current up to 20A.

The working principle of the MTP20N15E is threefold. Firstly the device is made up of a gate, source, and drain which are responsible for control and transfer of current respectively. An electrical potential is applied to the gate of the transistor which attracts or repels electrons to the gate-oxide. When there is a positive potential on the gate, the electrons move away from the gate to create an inversion layer in the channel between the source and the drain. This inversion layer effectively acts as an electrical conductor allowing current to flow. When no different potential exists between the gate and the source/drain, there is no flow of current and the transistor is effectively turned off.

The second working principle of the MTP20N15E is related to its gate-source impedance. This device has a high input impedance which makes it very effective in its use as a switch. It can control high voltage and large current in a variety of applications. It is also capable of switching at frequencies up to several hundred megahertz.

The third working principle is related to the device\'s on-resistance. This is a measure of its ability to conduct current when it is in the "on" state. The MTP20N15E has an exceptionally low on-resistance of around 0.20 ohms which makes it suitable for high current applications such as power switching and motor control.

In summary, the MTP20N15E is an enhancement mode metal-oxide-semiconductor field-effect transistor that is available in a variety of voltages and current ratings. It is best used for applications which require high voltage, fast switching, high input impedance and low on-resistance. It is a widely used device in a variety of industries and is capable of being used in many physically demanding situations.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "MTP2" Included word is 16
Part Number Manufacturer Price Quantity Description
MTP24K7 Switchcraft ... 76.41 $ 1000 PANEL WALL MT 24CH AUDIO/...
MTP2P50E ON Semicondu... -- 1000 MOSFET P-CH 500V 2A TO-22...
MTP2H-E6-C Panduit Corp 3.45 $ 1000 MULTI TIE PLATE 2 BDL 3.5...
MTP2P50EG ON Semicondu... 0.0 $ 1000 MOSFET P-CH 500V 2A TO220...
MTP2955V ON Semicondu... -- 1000 MOSFET P-CH 60V 12A TO-22...
MTP2H-E10-C Panduit Corp 3.35 $ 1000 MULTI TIE PLATE 2 BDL 3.5...
MTP2S-E10-C39 Panduit Corp 0.0 $ 1000 MULTI TIE PLATE HS 2 BDL ...
MTP24K11 Switchcraft ... 87.32 $ 1000 PANEL WALL MT 24CH AUDIO/...
MTP2S-E6-C Panduit Corp 0.85 $ 1000 MULTIPLE TIE PLATE 2 BDL ...
MTP23P06V ON Semicondu... 0.0 $ 1000 MOSFET P-CH 60V 23A TO-22...
MTP2S-E10-C Panduit Corp 0.82 $ 1000 MULTIPLE TIE PLATE 2 BDL ...
MTP24K11B Switchcraft ... 210.59 $ 1000 PANEL WALL MT 24CH AUDIO/...
MTP23P06VG ON Semicondu... -- 1000 MOSFET P-CH 60V 23A TO220...
MTP2H-E10-C39 Panduit Corp 0.0 $ 1000 MULTI TIE PLATE HS 2 BDL ...
MTP20N15EG ON Semicondu... -- 1000 MOSFET N-CH 150V 20A TO22...
MTP20N15E ON Semicondu... 0.0 $ 1000 MOSFET N-CH 150V 20A TO-2...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics