
Allicdata Part #: | MTP20N15E-ND |
Manufacturer Part#: |
MTP20N15E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 20A TO-220AB |
More Detail: | N-Channel 150V 20A (Tc) 112W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 112W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1627pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 55.9nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The MTP20N15E is a type of field-effect transistor (FET) designed for high voltage applications. It is a widely used type of transistor in many industrial applications and can be found in a variety of equipment ranging from automotive electronics to medical imaging. It is a simple three terminal semiconductor switch that is widely used due to its low on-resistance and high breakdown voltage. The MTP20N15E operates by using a metal-oxide-semiconductor field-effect transistor (MOSFET) as its switching element. The operation of this type of transistor is reliant upon the flow of current that is due to differences in electrical potential. The metal gate is electrically biased and typically the electrical charge from this gate is the sole controlling factor in the behavior of the transistor.
The MTP20N15E is best used when applications require high voltage and fast switching. This device is an enhancement mode MOSFET which has the ability to switch quickly and handle a higher voltage than other FETs. It is commonly used in motor control, power switching and other power management applications. Typically these types of FETs are rated for voltages from 200V to 600V and can handle current up to 20A.
The working principle of the MTP20N15E is threefold. Firstly the device is made up of a gate, source, and drain which are responsible for control and transfer of current respectively. An electrical potential is applied to the gate of the transistor which attracts or repels electrons to the gate-oxide. When there is a positive potential on the gate, the electrons move away from the gate to create an inversion layer in the channel between the source and the drain. This inversion layer effectively acts as an electrical conductor allowing current to flow. When no different potential exists between the gate and the source/drain, there is no flow of current and the transistor is effectively turned off.
The second working principle of the MTP20N15E is related to its gate-source impedance. This device has a high input impedance which makes it very effective in its use as a switch. It can control high voltage and large current in a variety of applications. It is also capable of switching at frequencies up to several hundred megahertz.
The third working principle is related to the device\'s on-resistance. This is a measure of its ability to conduct current when it is in the "on" state. The MTP20N15E has an exceptionally low on-resistance of around 0.20 ohms which makes it suitable for high current applications such as power switching and motor control.
In summary, the MTP20N15E is an enhancement mode metal-oxide-semiconductor field-effect transistor that is available in a variety of voltages and current ratings. It is best used for applications which require high voltage, fast switching, high input impedance and low on-resistance. It is a widely used device in a variety of industries and is capable of being used in many physically demanding situations.
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