MTP20N15EG Allicdata Electronics
Allicdata Part #:

MTP20N15EG-ND

Manufacturer Part#:

MTP20N15EG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 150V 20A TO220AB
More Detail: N-Channel 150V 20A (Tc) 112W (Tc) Through Hole TO-...
DataSheet: MTP20N15EG datasheetMTP20N15EG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 112W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1627pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55.9nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The MTP20N15EG is a high voltage N-channel, Enhancement mode insulated gate field effect transistor (IGFET). It is a high voltage transistor primarily developed for motor-drive and DC-DC converters.

MTP20N15EG transistors are designed to handle high power that can source up to 20 Amperes. They have a voltage rating of 150V with a low on-state resistance RDS(on). In most cases, these transistors are used in automotive and industrial applications.

MTP20N15EG transistors are particularly useful in switching power supply applications. They feature a fast switching frequency and low drain-source charge. They are also highly efficient as they operate with minimal power dissipation.

The MTP20N15EG has a working principle that is similar to traditional transistors but with certain modifications. This type of transistor is known as a metal-oxide-semiconductor FET, or MOSFET. It is composed of an insulated gate, which is made up of P-type and N-type substrates, and a source layer. The source layer is composed of N-type silicon. As a result, when a voltage is applied to the gate, an electric field is created and this causes the source to become negatively charged, creating a channel.

In terms of application field, MTP20N15EG transistors are used where high switching speeds and low power dissipation are required. They can be used in high current bar switch applications as well as in motor-driving and DC-DC converter applications. The MTP20N15EG transistors are also suited to lighting control and solid-state relay applications.

Moreover, the MTP20N15EG transistors are suitable for a variety of other applications, such as Class D audio amplifiers, switching power supplies, automotive sensor systems and electromechanical relays.

Finally, the MTP20N15EG transistors are also used in frequency response circuit designs. This type of design is important as it helps to make a circuit’s signal processing more efficient. It also helps to reduce the risk of circuit failure due to improper signal processing.

In conclusion, the MTP20N15EG is an extremely versatile and capable field effect transistor, offering a low power dissipation, fast switching speed and high current capabilities. It is suitable for a variety of applications including motor-driving, lighting control, Class D audio amplifiers, frequency response circuits and DC-DC converters.

The specific data is subject to PDF, and the above content is for reference

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