| Allicdata Part #: | MTP2P50EOS-ND |
| Manufacturer Part#: |
MTP2P50E |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 500V 2A TO-220ABP-Channel 500V 2A (Tc)... |
| More Detail: | N/A |
| DataSheet: |  MTP2P50E Datasheet/PDF |
| Quantity: | 1000 |
| Series: | MTP2P |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 500V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 6 Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Power - Max: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1183pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 75W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
| Base Part Number: | MTP2P50E |
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1. Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
2. Features
1. Robust High Voltage Termination
2. Avalanche Energy Specified
3. Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
4. Diode is Characterized for Use in Bridge Circuits
5. IDSS and VDS(on) Specified at Elevated Temperature
6. This is a Pb−Free Device*
3. Pin configuration
4. PACKAGE DIMENSIONS
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MTP24K7 | Switchcraft ... | 76.41 $ | 1000 | PANEL WALL MT 24CH AUDIO/... |
| MTP2P50E | ON Semicondu... | -- | 1000 | MOSFET P-CH 500V 2A TO-22... |
| MTP2H-E6-C | Panduit Corp | 3.45 $ | 1000 | MULTI TIE PLATE 2 BDL 3.5... |
| MTP2P50EG | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 500V 2A TO220... |
| MTP2955V | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 12A TO-22... |
| MTP2H-E10-C | Panduit Corp | 3.35 $ | 1000 | MULTI TIE PLATE 2 BDL 3.5... |
| MTP2S-E10-C39 | Panduit Corp | 0.0 $ | 1000 | MULTI TIE PLATE HS 2 BDL ... |
| MTP24K11 | Switchcraft ... | 87.32 $ | 1000 | PANEL WALL MT 24CH AUDIO/... |
| MTP2S-E6-C | Panduit Corp | 0.85 $ | 1000 | MULTIPLE TIE PLATE 2 BDL ... |
| MTP23P06V | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 60V 23A TO-22... |
| MTP2S-E10-C | Panduit Corp | 0.82 $ | 1000 | MULTIPLE TIE PLATE 2 BDL ... |
| MTP24K11B | Switchcraft ... | 210.59 $ | 1000 | PANEL WALL MT 24CH AUDIO/... |
| MTP23P06VG | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 23A TO220... |
| MTP2H-E10-C39 | Panduit Corp | 0.0 $ | 1000 | MULTI TIE PLATE HS 2 BDL ... |
| MTP20N15EG | ON Semicondu... | -- | 1000 | MOSFET N-CH 150V 20A TO22... |
| MTP20N15E | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 150V 20A TO-2... |
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