
Allicdata Part #: | MTP2P50EGOS-ND |
Manufacturer Part#: |
MTP2P50EG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 500V 2A TO220AB |
More Detail: | P-Channel 500V 2A (Tc) 75W (Tc) Through Hole TO-22... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1183pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MTP2P50EG is a part of the family of Field Effect Transistors (FETs) known as a Metal Oxide Semiconductor FET (MOSFET). It is single type, meaning it contains only one channel, which is an open-channel region made of N-type Silicon material traversing the source-drain paths. The P-well is located underneath the N-well, with a gate path composed of a Polysilicon layer above the N-well. The gate, source and drain are “floating”, meaning, there is no direct electrical connection between them, allowing for close proximity and low capacitance when compared to traditional FETs.The MTP2P50EG has a low maximum gate-source voltage (Vgs) threshold, which makes it suitable for low input power applications such as antenna switches and mixers. It is also well suited for power switching applications with its maximum drain-source voltage (Vds) of 50 volts and a maximum drain current of 200 milliamps. The MTP2P50EG can be operated in both enhancement and depletion modes, with a positive threshold voltage (Vth) of approximately 0.8 volts.The MTP2P50EG’s operation is based on the flow of current between the source and drain electrodes. To turn the FET on, a positive voltage is applied to the gate which attracts the electrons in the N-well to the Polysilicon gate, forming a conductive channel connecting the source and drain. Once a current begins to flow, it is amplified across the channel as current is quickly drawn from the source and deposited into the drain.The main advantage of the MTP2P50EG is its ability to withstand large voltages and currents with minimal power loss. This makes it ideal for applications requiring high power and reliability such as power supplies, voltage regulator modules and switching power supplies.The MTP2P50EG is also popular in automotive engineering. It is often used in suspension, engine control and power train systems. It is also used in airbag inflation systems and other safety-related applications due to its high dielectric strength and reliability.The MTP2P50EG is an effective and reliable choice for any device requiring high power or voltage capabilities such as high voltage power supplies and engine control systems. Its low gate-source voltage threshold ensures its suitability in low power applications such as antenna switches and mixers. Its ability to withstand large voltages and currents with minimal power loss makes it ideal for automotive engineering applications such as suspension and engine control.
The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "MTP2" Included word is 16
Part Number | Manufacturer | Price | Quantity | Description |
---|
MTP24K7 | Switchcraft ... | 76.41 $ | 1000 | PANEL WALL MT 24CH AUDIO/... |
MTP2P50E | ON Semicondu... | -- | 1000 | MOSFET P-CH 500V 2A TO-22... |
MTP2H-E6-C | Panduit Corp | 3.45 $ | 1000 | MULTI TIE PLATE 2 BDL 3.5... |
MTP2P50EG | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 500V 2A TO220... |
MTP2955V | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 12A TO-22... |
MTP2H-E10-C | Panduit Corp | 3.35 $ | 1000 | MULTI TIE PLATE 2 BDL 3.5... |
MTP2S-E10-C39 | Panduit Corp | 0.0 $ | 1000 | MULTI TIE PLATE HS 2 BDL ... |
MTP24K11 | Switchcraft ... | 87.32 $ | 1000 | PANEL WALL MT 24CH AUDIO/... |
MTP2S-E6-C | Panduit Corp | 0.85 $ | 1000 | MULTIPLE TIE PLATE 2 BDL ... |
MTP23P06V | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 60V 23A TO-22... |
MTP2S-E10-C | Panduit Corp | 0.82 $ | 1000 | MULTIPLE TIE PLATE 2 BDL ... |
MTP24K11B | Switchcraft ... | 210.59 $ | 1000 | PANEL WALL MT 24CH AUDIO/... |
MTP23P06VG | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 23A TO220... |
MTP2H-E10-C39 | Panduit Corp | 0.0 $ | 1000 | MULTI TIE PLATE HS 2 BDL ... |
MTP20N15EG | ON Semicondu... | -- | 1000 | MOSFET N-CH 150V 20A TO22... |
MTP20N15E | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 150V 20A TO-2... |
Latest Products
IRFL31N20D
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IXTT440N055T2
MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTH14N80
MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXFT23N60Q
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXTT72N20
MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXFT9N80Q
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
