MTP2P50EG Allicdata Electronics
Allicdata Part #:

MTP2P50EGOS-ND

Manufacturer Part#:

MTP2P50EG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 500V 2A TO220AB
More Detail: P-Channel 500V 2A (Tc) 75W (Tc) Through Hole TO-22...
DataSheet: MTP2P50EG datasheetMTP2P50EG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 75W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1183pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The MTP2P50EG is a part of the family of Field Effect Transistors (FETs) known as a Metal Oxide Semiconductor FET (MOSFET). It is single type, meaning it contains only one channel, which is an open-channel region made of N-type Silicon material traversing the source-drain paths. The P-well is located underneath the N-well, with a gate path composed of a Polysilicon layer above the N-well. The gate, source and drain are “floating”, meaning, there is no direct electrical connection between them, allowing for close proximity and low capacitance when compared to traditional FETs.The MTP2P50EG has a low maximum gate-source voltage (Vgs) threshold, which makes it suitable for low input power applications such as antenna switches and mixers. It is also well suited for power switching applications with its maximum drain-source voltage (Vds) of 50 volts and a maximum drain current of 200 milliamps. The MTP2P50EG can be operated in both enhancement and depletion modes, with a positive threshold voltage (Vth) of approximately 0.8 volts.The MTP2P50EG’s operation is based on the flow of current between the source and drain electrodes. To turn the FET on, a positive voltage is applied to the gate which attracts the electrons in the N-well to the Polysilicon gate, forming a conductive channel connecting the source and drain. Once a current begins to flow, it is amplified across the channel as current is quickly drawn from the source and deposited into the drain.The main advantage of the MTP2P50EG is its ability to withstand large voltages and currents with minimal power loss. This makes it ideal for applications requiring high power and reliability such as power supplies, voltage regulator modules and switching power supplies.The MTP2P50EG is also popular in automotive engineering. It is often used in suspension, engine control and power train systems. It is also used in airbag inflation systems and other safety-related applications due to its high dielectric strength and reliability.The MTP2P50EG is an effective and reliable choice for any device requiring high power or voltage capabilities such as high voltage power supplies and engine control systems. Its low gate-source voltage threshold ensures its suitability in low power applications such as antenna switches and mixers. Its ability to withstand large voltages and currents with minimal power loss makes it ideal for automotive engineering applications such as suspension and engine control.

The specific data is subject to PDF, and the above content is for reference

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