MTP23P06VG Allicdata Electronics
Allicdata Part #:

MTP23P06VGOS-ND

Manufacturer Part#:

MTP23P06VG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 60V 23A TO220AB
More Detail: P-Channel 60V 23A (Tc) 90W (Tc) Through Hole TO-22...
DataSheet: MTP23P06VG datasheetMTP23P06VG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 90W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 120 mOhm @ 11.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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MTP23P06VG Applications Field and Working Principle

The MTP23P06VG is a N-channel enhancement mode Field-Effect Transistor (MOSFET) manufactured by STMicroelectronics. It is one of the many products from their U.S. MOSFETs series range. This MOSFET is designed to be used in circuits which require low-side switching and operating at voltages ranging between 7 and 20 volts.

A MOSFET is a type of transistor which uses a semiconductor gate to control the voltage and current flow between the source and drains. A MOSFET can be used as a linear amplifier or as an input or output stage of a switching circuit. As they require only a small input current to control a larger output current, they are an excellent choice for applications requiring low power consumption. The MTP23P06VG is a single MOSFET with three terminals, identified as the source, gate and drain terminals.

MTP23P06VG Specifications

  • Maximum Drain Source Voltage (VDS): 20 V
  • Maximum Drain Current (ID): 0.25A
  • Gate-Source Voltage: 5V
  • Continuous Drain Source Voltage (VDS) RDS(ON): 0.75 Ω @ 12V
  • Power Dissipation (PD): 225mW
  • Maximum Junction Temperature (TJ): 150 °C
  • Pd - Power Dissipation: 225mW
  • Operating Temperature Range: -55 °C to 150 °C

MTP23P06VG Applications

The MTP23P06VG is suitable for applications such as motor control, switching power supplies, and many other DC/DC power converters. Other applications where this MOSFET can be used include safety and security systems.

MTP23P06VG Working Principle

MOSFETs operate on the principle of capacitance. When a voltage is applied to the gate, it forms an electrical field which attracts electrons (or collects them) from the source, through a thin (typically made of SiO2) insulation layer, known as the gate dielectric, to the metal plate which serves as the gate. This, in turn, forms a conducting channel between the source and drain. current flow is established when the voltage reaches a certain threshold, called the threshold voltage (VGS).

In the case of the MTP23P06VG, the threshold voltage is 5V. When the MOSFET is in the OFF state, no current will flow and the resistance between the source and drain is virtually infinite. When the voltage applied to the gate is increased, the current between the source and drain will increase and the resistance between them will decrease.

MTP23P06VG Benefits

MOSFETs are one of the most efficient and reliable components used in the electronics industry. In comparison to other components and technologies, they offer some distinct advantages. First, they have a fast switching speed, which makes them ideal for a wide range of applications. Second, they are also quite power efficient, so they do not consume a lot of electricity. Lastly, they have a wide temperature range, which makes them suitable for both high and low temperature environments.

The MTP23P06VG, in particular, also provides excellent power dissipation, which is great for applications that require high current peaks and low on-resistance. The low thermal resistance makes it suitable for use in designs which need to dissipate heat quickly.

Conclusion

The MTP23P06VG is a high-performance N-channel MOSFET manufactured by STMicroelectronics. This MOSFET is designed to be used in circuits that require low-side switching and has excellent switching and power dissipation characteristics. It features a low threshold voltage and a wide operating temperature range, making it suitable for both high and low temperature environments. Additionally, its low on-resistance provides excellent power dissipation for higher current peaks.

The specific data is subject to PDF, and the above content is for reference

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