Allicdata Part #: | 1086-11440-ND |
Manufacturer Part#: |
MXLSMBG2K3.0E3 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 3V 5.4V DO215AA |
More Detail: | N/A |
DataSheet: | MXLSMBG2K3.0E3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 5.4V |
Supplier Device Package: | SMBG (DO-215AA) |
Package / Case: | DO-215AA, SMB Gull Wing |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 2000W (2kW) |
Current - Peak Pulse (10/1000µs): | 10A (8/20µs) |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 4.3V |
Voltage - Reverse Standoff (Typ): | 3V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS - Diodes have many applications in protecting electronic circuits from voltage transients, surge, electrostatic discharge (ESD), and other hazardous conditions. MXLSMBG2K3.0E3 is a specialized TVS diode designed for a variety of application areas.
MXLSMBG2K3.0E3 has three major advantages that make it a reliable choice for a variety of application areas. First, it has a long-term reliability rate of 0.001%, meaning that it can be used for decades without needing to be replaced. This makes MXLSMBG2K3.0E3 ideal for applications that require long-term reliability. Second, the device is very small, allowing it to fit into tight spaces while still providing sufficient protection. Finally, this diode is cost-effective, making it attractive for various applications.
The primary application area for MXLSMBG2K3.0E3 is the protection of circuits against overvoltage surges, transients, and ESD. The device is designed to clamp off voltage transients that exceed a certain threshold, and dissipate the excess energy. In addition, the diode is also used to protect against high-speed, low-energy ESD pulses that can cause malfunctions.
The working principle of MXLSMBG2K3.0E3 is based on the body diode, which is formed from the junction of two diodes connected in opposite directions. Charged carriers are then conducted through the body diode as current. When sufficient current is produced, the body diode becomes forward biased and discharges the excess voltage until the voltage reaches a safe level.
In addition to the protection provided by the device, MXLSMBG2K3.0E3 also offers low leakage current and fast response time. The device has a maximum leak current of 0.5µA and a breakdown voltage of 3.0V, which helps to ensure that it can protect circuits from transients and surges. The fast response time of theTVS diode helps to reduce circuit disruption due to surges or ESD events.
In summary, MXLSMBG2K3.0E3 is a specializedTVS diode designed for a variety of application areas. The device offers excellent protection against transients, surges, and electrostatic discharge, making it an ideal choice for many different applications. The diode has a long-term reliability rate of 0.001%, a small size, and a cost-effective design, making it attractive to various applications. The device works by clamping off voltage transients that exceed a certain threshold and dissipating the excess energy, while also offering low leakage current and a fast response time.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MXLSMBG2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO215AA |
MXLSMBG2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO215AA |
MXLSMBG2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO215... |
MXLSMBG2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO215... |
MXLSMBG2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO215AA |
MXLSMBG2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO215AA |
MXLSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
MXLSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
MXLSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXLSMBG2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXLSMBJ2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXLSMBJ2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXLSMCJ100A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXLSMCJ100AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXLSMCJ10A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MXLSMCJ10AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MXLSMCJ110A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMCJ110AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMCJ11A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXLSMCJ11AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXLSMCJ120A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXLSMCJ120AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXLSMCJ12A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXLSMCJ12AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXLSMCJ130A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXLSMCJ130AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXLSMCJ13A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXLSMCJ13AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXLSMCJ14A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MXLSMCJ14AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MXLSMCJ150A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 150V 243V DO214... |
MXLSMCJ150AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 150V 243V DO214... |
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