MXLSMCJ110AE3 Circuit Protection |
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Allicdata Part #: | 1086-12050-ND |
Manufacturer Part#: |
MXLSMCJ110AE3 |
Price: | $ 7.43 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 110V 177V DO214AB |
More Detail: | N/A |
DataSheet: | MXLSMCJ110AE3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 6.76229 |
Voltage - Clamping (Max) @ Ipp: | 177V |
Supplier Device Package: | DO-214AB (SMCJ) |
Package / Case: | DO-214AB, SMC |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 8.4A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 122V |
Voltage - Reverse Standoff (Typ): | 110V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS - Diodes or Transient Voltage Suppressor (TVS) diodes are a type of semiconductor device that is designed to protect sensitive electronics from high-voltage, power or signal induction. They are used to limit voltage transients, such as those that come from lightning or electrostatic discharge, that could otherwise cause permanent damage to the semiconductor. MXLSMCJ110AE3 is one such TVS-diode designed to protect a variety of devices against high-voltage transients.
The MXLSMCJ110AE3 is a unidirectional, low capacitance, 400W, surface-mount device with a low clamping voltage of 26.8V. The device has an excellent surge rating with an 8/20µs pulse of 14A. The device’s peak pulse power is 4000A. It is also designed with the capability to withstand operating temperatures between -55°C and 175°C. The device is packaged in an 0805 package and is constructed in such a way that it dissipates as much heat as possible while keeping its voltage within the specified range. The device also has excellent thermal stability and can handle high power transients.
The MXLSMCJ110AE3 is ideal for applications such as over-voltage protection in audio, RF, and other consumer electronic products. It also provides protection for a variety of automotive applications, including fuel/air controllers, electronic engine controls, and body computers. It is also suitable for applications in the industrial, telecom, and medical sectors. The MXLSMCJ110AE3 can be used in power supplies, solar and LED lighting, and automotive electronics such as charging systems and battery protection circuits.
The working principle of the MXLSMCJ110AE3 is relatively simple. Its silicon diode structure allows for a low clamping voltage that quickly limits high-voltage transients. The diode is also designed to allow for a low capacitance that ensures negligible signal distortion. The diode structure allows for a low junction capacitance and a low power dissipation. When the device comes in contact with a surge, the voltage is clamped to the specified level, protecting the device from damage.
In conclusion, the MXLSMCJ110AE3 is a versatile device designed to protect a variety of devices from high-voltage transients. Its low capacitance and low power dissipation ensures minimal signal distortion, and its high surge rating ensures optimal protection from potential power surges. The device is suitable for applications such as over-voltage protection in consumer electronic products, automotive applications, and industrial telecommunication applications. Its silicon diode structure allows for a low clamping voltage that quickly limits high-voltage transients.
The specific data is subject to PDF, and the above content is for reference
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MXLSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXLSMBG2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXLSMBJ2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXLSMBJ2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
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MXLSMCJ100AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXLSMCJ10A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MXLSMCJ10AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MXLSMCJ110A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMCJ110AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMCJ11A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
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MXLSMCJ120AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXLSMCJ12A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
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MXLSMCJ130AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
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