MXLSMCJ110AE3 Allicdata Electronics

MXLSMCJ110AE3 Circuit Protection

Allicdata Part #:

1086-12050-ND

Manufacturer Part#:

MXLSMCJ110AE3

Price: $ 7.43
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 110V 177V DO214AB
More Detail: N/A
DataSheet: MXLSMCJ110AE3 datasheetMXLSMCJ110AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 6.76229
Stock 1000Can Ship Immediately
$ 7.43
Specifications
Voltage - Clamping (Max) @ Ipp: 177V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 8.4A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 122V
Voltage - Reverse Standoff (Typ): 110V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes or Transient Voltage Suppressor (TVS) diodes are a type of semiconductor device that is designed to protect sensitive electronics from high-voltage, power or signal induction. They are used to limit voltage transients, such as those that come from lightning or electrostatic discharge, that could otherwise cause permanent damage to the semiconductor. MXLSMCJ110AE3 is one such TVS-diode designed to protect a variety of devices against high-voltage transients.

The MXLSMCJ110AE3 is a unidirectional, low capacitance, 400W, surface-mount device with a low clamping voltage of 26.8V. The device has an excellent surge rating with an 8/20µs pulse of 14A. The device’s peak pulse power is 4000A. It is also designed with the capability to withstand operating temperatures between -55°C and 175°C. The device is packaged in an 0805 package and is constructed in such a way that it dissipates as much heat as possible while keeping its voltage within the specified range. The device also has excellent thermal stability and can handle high power transients.

The MXLSMCJ110AE3 is ideal for applications such as over-voltage protection in audio, RF, and other consumer electronic products. It also provides protection for a variety of automotive applications, including fuel/air controllers, electronic engine controls, and body computers. It is also suitable for applications in the industrial, telecom, and medical sectors. The MXLSMCJ110AE3 can be used in power supplies, solar and LED lighting, and automotive electronics such as charging systems and battery protection circuits.

The working principle of the MXLSMCJ110AE3 is relatively simple. Its silicon diode structure allows for a low clamping voltage that quickly limits high-voltage transients. The diode is also designed to allow for a low capacitance that ensures negligible signal distortion. The diode structure allows for a low junction capacitance and a low power dissipation. When the device comes in contact with a surge, the voltage is clamped to the specified level, protecting the device from damage.

In conclusion, the MXLSMCJ110AE3 is a versatile device designed to protect a variety of devices from high-voltage transients. Its low capacitance and low power dissipation ensures minimal signal distortion, and its high surge rating ensures optimal protection from potential power surges. The device is suitable for applications such as over-voltage protection in consumer electronic products, automotive applications, and industrial telecommunication applications. Its silicon diode structure allows for a low clamping voltage that quickly limits high-voltage transients.

The specific data is subject to PDF, and the above content is for reference

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