Allicdata Part #: | 1086-11635-ND |
Manufacturer Part#: |
MXLSMBJ2K3.3 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 3.3V 5.8V DO214AA |
More Detail: | N/A |
DataSheet: | MXLSMBJ2K3.3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 5.8V |
Supplier Device Package: | SMBJ (DO-214AA) |
Package / Case: | DO-214AA, SMB |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 2000W (2kW) |
Current - Peak Pulse (10/1000µs): | 10A (8/20µs) |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 4.6V |
Voltage - Reverse Standoff (Typ): | 3.3V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
TVS - Diodes
The most common and widely used type of protection device is the Transient Voltage Suppressor (TVS) diode. It is a semiconductor component specifically designed to protect electrical and electronic systems from transient voltage disturbances. It can protect the equipment from overvoltages, electrostatic discharges (ESD), and power discrimination. TVS diodes are also widely used in telecommunications applications where lightning protection is required.
MXLSMBJ2K3.3 Application Field and Working Principle
The MXLSMBJ2K3.3 is a single-line Transient Voltage Suppressor (TVS) diode with a 5kW surge rating for bidirectional protection over the operating temperature range of -55°C to +125°C.
It is designed for use in automotive and integrated modules on communication, automotive, storage and networking systems, consumer, industrial and automotive systems. The TVS diode has an avalanche breakdown voltage of 36V with a reverse leakage current of IR=20μA . Operating over the temperature range of -55°C to +125°C, it provides a robust cross-point protection against ESD, transients, surges and power discrimination.
The device is designed to minimize its capacitance to reduce device-to-device interference, thus providing robust ESD protection. To achieve this, the diode is designed with two sections: an avalanche diode and an ultra-low reverse leakage field-effect transistor (FET). The avalanche diode protects the device by clamping overvoltage and ESD events. The FET is used to limit the reverse leakage current at high voltages.
When the applied voltage is below the avalanche breakdown voltage, the diode behaves as an open circuit and no current flows through the device. However, at voltages greater than the avalanche breakdown voltage, the diode switches to a low-resistance “on” state and allows current to flow. This switching action temporarily clamps the voltage, limiting its peak value and dissipating the energy associated with the transient or overvoltage.
The MXLSMBJ2K3.3 TVS has a fast response time and can be used in the most rugged environments. It is designed to handle a large surge current while providing protection from overvoltages and Electrostatic Discharges. It is ideal for use in automotive and integrated modules on communication, automotive, storage and networking systems, consumer, industrial and automotive systems. It is RoHS compliant and AEC-Q101 qualified.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MXLSMBG2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO215AA |
MXLSMBG2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO215AA |
MXLSMBG2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO215... |
MXLSMBG2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO215... |
MXLSMBG2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO215AA |
MXLSMBG2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO215AA |
MXLSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
MXLSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
MXLSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXLSMBG2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXLSMBJ2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXLSMBJ2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXLSMCJ100A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXLSMCJ100AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXLSMCJ10A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MXLSMCJ10AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MXLSMCJ110A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMCJ110AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMCJ11A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXLSMCJ11AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXLSMCJ120A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXLSMCJ120AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXLSMCJ12A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXLSMCJ12AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXLSMCJ130A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXLSMCJ130AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXLSMCJ13A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXLSMCJ13AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXLSMCJ14A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MXLSMCJ14AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MXLSMCJ150A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 150V 243V DO214... |
MXLSMCJ150AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 150V 243V DO214... |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL