MXLSMBJ2K3.3E3

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TVS - Diodes are a type of semiconductor device used in a variety of electronic applications. The MXLSMBJ2K3.3E3 is a TVS - Diode specifically designed for use in power line protection applications. It offers a high level of breakdown voltage (3302 volts) and current (1.7 milliamps) with low power dissipation. It also has a wide operating temperature range (-55 to + 125°C).

The basic working principle of a TVS - Diode is quite simple. It is basically a voltage-dependent diode that clamps the voltage on one side of the device when it becomes too high. They are commonly used to protect sensitive devices from electrical overvoltages and power surges. To do this, the device allows normal signals to pass while at the same time blocking potentially destructive high voltage surges.

The MXLSMBJ2K3.3E3, in particular, is used for power line protection applications. When a surge occurs on the power line, the diode begins to conduct and absorb the excess energy. This protects the sensitive equipment connected to the power line from getting damaged. The diode is designed to handle up to 3.3 kV of voltage and has a response time of less than 1.4 µs. It also has a high surge current capability of up to 1.2 kA.

TVS - Diodes are increasingly being used in applications that require protection from overvoltage, power surges and high voltage spikes. The MXLSMBJ2K3.3E3 is an ideal choice for power line applications because of its high breakdown voltage, low power dissipation and wide operating temperature range. It is designed to provide reliable protection without compromising system performance.

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