MXLSMCJ10AE3 Circuit Protection |
|
Allicdata Part #: | 1086-12046-ND |
Manufacturer Part#: |
MXLSMCJ10AE3 |
Price: | $ 7.43 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 10V 17V DO214AB |
More Detail: | N/A |
DataSheet: | MXLSMCJ10AE3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 6.76229 |
Voltage - Clamping (Max) @ Ipp: | 17V |
Supplier Device Package: | DO-214AB (SMCJ) |
Package / Case: | DO-214AB, SMC |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 88.2A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 11.1V |
Voltage - Reverse Standoff (Typ): | 10V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
TVS - Diodes is a type of semiconductor that is used to protect electronic circuits from overvoltage conditions and power spikes. The MXLSMCJ10AE3 is a unidirectional bi-directional diode that has been specially designed for use in automotive applications such as car batteries and audio systems. This device has a typical clamping voltage of 16V, reverse leakage current of 4nA, and an operating temperature range from -40°C to 120°C. It is also built with advanced protection technologies that provide superior surge protection and EMI/RFI shielding.
The MXLSMCJ10AE3 application field typically consists of automotive and industrial applications, including automotive batteries, car audio systems, solar panel protection, and lightning protection. It is also suitable for other consumer electronics such as computers, electronic components, or tools. This device is used to protect electronic circuits from overvoltage conditions and power spikes by providing a low-clamping voltage, which means that even if the surges reach a high level, it does not allow the voltage to exceed 16 volts, protecting the circuit.
The MXLSMCJ10AE3 working principle is based on the physical and electrical properties of semiconductors. When the external voltage exceeds the allowed threshold, it triggers the breakdown of the semiconductor junction, allowing the current to enter. This process causes the device to clamp the voltage at a certain level, which is the main function of the MXLSMCJ10AE3. Usually, this voltage is rated at a maximum of 16 volts, allowing the device to protect the circuitry from power surges and overvoltage conditions.
Another important feature of the MXLSMCJ10AE3 is its EMI/RFI shielding capability. This type of shielding is important in order to protect circuits from electromagnetic interference that can cause signal interference or even degrade its performance. This device has superior EMI/RFI shielding capability, which is why it is often the preferred type of TVS diodes for automotive and industrial applications. Furthermore, it has a low reverse leakage current, which helps to reduce energy losses when the diode is not actively conducting electrons.
Apart from its protection and shielding capabilities, the MXLSMCJ10AE3 is also built with advanced technologies to offer a longer life span. It has a low leakage current, which helps to improve the overall performance of the device, and its high temperature resistance means that it can be used in harsher environments. It also has strong surge protection capabilities, ensuring that the device can protect circuits against high voltages.
In conclusion, the MXLSMCJ10AE3 is a unidirectional bi-directional TVS diode, designed for automotive and industrial applications. It has a low-clamping voltage, EMI/RFI shielding, and a wide operating temperature range, making it a suitable device for use in many electrical circuits. Its surge protection capabilities ensure that it is able to protect electronic circuits from power spikes and overvoltage conditions, making it a valuable device for protecting sensitive electronics.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MXLSMBG2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO215AA |
MXLSMBG2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO215AA |
MXLSMBG2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO215... |
MXLSMBG2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO215... |
MXLSMBG2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO215AA |
MXLSMBG2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO215AA |
MXLSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
MXLSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
MXLSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXLSMBG2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXLSMBJ2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXLSMBJ2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXLSMCJ100A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXLSMCJ100AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXLSMCJ10A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MXLSMCJ10AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MXLSMCJ110A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMCJ110AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMCJ11A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXLSMCJ11AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXLSMCJ120A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXLSMCJ120AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXLSMCJ12A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXLSMCJ12AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXLSMCJ130A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXLSMCJ130AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXLSMCJ13A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXLSMCJ13AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXLSMCJ14A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MXLSMCJ14AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MXLSMCJ150A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 150V 243V DO214... |
MXLSMCJ150AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 150V 243V DO214... |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL