MXLSMCJ11A Circuit Protection |
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Allicdata Part #: | 1086-12053-ND |
Manufacturer Part#: |
MXLSMCJ11A |
Price: | $ 7.43 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 11V 18.2V DO214AB |
More Detail: | N/A |
DataSheet: | MXLSMCJ11A Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 6.76229 |
Voltage - Clamping (Max) @ Ipp: | 18.2V |
Supplier Device Package: | DO-214AB (SMCJ) |
Package / Case: | DO-214AB, SMC |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 82.4A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 12.2V |
Voltage - Reverse Standoff (Typ): | 11V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS diodes, also known as transient voltage suppression diodes, are electronic components used to protect circuits from voltage levels that exceed certain thresholds. The MXLSMCJ11A is an example of such a device and is used in many different applications. In this article, we will discuss the application field of the MXLSMCJ11A as well as its working principle.
Applications
The MXLSMCJ11A is primarily used to protect circuits from overvoltage and ESD transients. It is commonly used in high speed data communications and differential interface circuits. More specifically, the MXLSMCJ11A is used to protect electronic equipment such as cell phones, tablets, and laptops from ESD damage. It is also commonly used to protect sensitive components in medical and automotive applications.
The MXLSMCJ11A is also highly effective for suppressing EFT surges and RF power lines, making it a great choice for many types of electronic circuitry. This device can also be used in conjunction with other kinds of protection components, such as MOVs, for an added level of protection against overvoltage.
Working Principle
At its core, the MXLSMCJ11A is a three-layer diode structure. This device uses the avalanche effect to create a conductive path between the layer construction, allowing it to absorb and attenuate voltage spikes. The MXLSMCJ11A is designed with a peak power rating of 600W and a breakdown voltage ranging from 5V to 30V.
The MXLSMCJ11A has a very fast response time and can effectively protect sensitive electronic components from voltage transients. This device is also highly resistant to damages caused by electrostatic discharges. Its structure allows it to suppress surges up to 40A per line and frequencies up to 10 GHz.
The MXLSMCJ11A also features a low capacitance design, allowing it to interface with loads that require high bandwidths. This device also utilizes symmetrical application of bias for greater stability and reduced amount of ringing on the output signal.
Conclusion
The MXLSMCJ11A is a versatile TVS diode that is effective for suppressing various types of overvoltage and ESD transients. It is a great choice for applications requiring high bandwidths, fast response times, and highly resistant electrostatic discharges. The MXLSMCJ11A is an example of a modern protection device that can significantly reduce the chances of electronic equipment suffering any potential damage from these kinds of events.
The specific data is subject to PDF, and the above content is for reference
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MXLSMBJ2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXLSMBJ2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXLSMCJ100A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXLSMCJ100AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXLSMCJ10A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MXLSMCJ10AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MXLSMCJ110A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMCJ110AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMCJ11A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXLSMCJ11AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
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MXLSMCJ12AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXLSMCJ130A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
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MXLSMCJ13AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
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