![MXLSMBJ160AE3 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
MXLSMBJ160AE3 Circuit Protection |
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Allicdata Part #: | 1086-11594-ND |
Manufacturer Part#: |
MXLSMBJ160AE3 |
Price: | $ 7.11 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 160V 259V DO214AA |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 6.45599 |
Voltage - Clamping (Max) @ Ipp: | 259V |
Supplier Device Package: | SMBJ (DO-214AA) |
Package / Case: | DO-214AA, SMB |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Current - Peak Pulse (10/1000µs): | 2.3A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 178V |
Voltage - Reverse Standoff (Typ): | 160V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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The MXLSMBJ160AE3 is a Transient Voltage Suppressor (TVS) Diode. It provides ESD and Surge protection to sensitive components, including integrated circuits, transistors, and diodes; and it is designed specifically to protect against voltage transients, such as those associated with Electro-Static Discharge (ESD). This diode is optimized to provide protection from pulsed transients of up to 160A and clamping voltages of up to 12.5V.
TVS-Diodes are specifically designed to provide protection against electrical transients, such as those resulting from ESD or the affects of lightning strikes. The construction of the diode makes it sensitive to very small increases in voltage, usually of the order of 50V/ns. When a TVS-Diode senses a transient, it “clamps” the voltage, limiting its maximum peak voltage to a predetermined value. By doing this, these devices can safely direct the surge of energy away from sensitive components and into the ground, keeping them from being damaged.
The MXLSMBJ160AE3 is specifically designed to provide an optimal surge protection for components in the most hostile environments. This diode is made with a low-capacitance design to reduce the impact from leakage currents. It also has a low reverse leakage current, enabling it to provide protection even in the most extreme situations. Additionally, this device is resistant to high voltage transients that are commonly seen in automotive applications. It is also available in an industrial package, making it suitable for a wide range of applications.
Additional features of the MXLSMBJ160AE3 include a high-temperature capability of -55 to +125C, a storage temperature range of -55 to +150C, and an ESD rating of up to 2kV. The device also features a high peak pulse rating of 4kV and a peak power dissipation of 800W. All these features make the MXLSMBJ160AE3 an ideal choice for providing reliable protection for sensitive components.
The working principle of a TVS-Diode is simple yet incredibly effective. When a transient (rise in voltage) is sensed, the diode “clamps” the voltage, limiting its maximum peak voltage to the predetermined value. The advantage of this is that it allows the energy to be safely diverted away from sensitive components and into the ground, reducing any potential damage to them. The device also has a low capacitance design, which reduces the impact from leakage currents, further enhancing its reliability.
In conclusion, the MXLSMBJ160AE3 is a highly reliable and cost-effective solution for ESD and Surge protection for sensitive components. This device features an optimal surge protection for components in the most hostile environments and is capable of providing protection from voltage transients of up to 160A and clamping voltages of up to 12.5V. It is also available in an industrial package, making it suitable for a wide range of applications. All of these features make the MXLSMBJ160AE3 an ideal choice for providing reliable protection for sensitive components.
The specific data is subject to PDF, and the above content is for reference
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MXLSMBJ2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXLSMBJ2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXLSMBJ2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXLSMBJ2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXLSMBJ2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXLSMBJ2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
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MXLSMCJ110A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXLSMCJ110AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 110V 177V DO214... |
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MXLSMCJ120AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 120V 193V DO214... |
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