NDS8852H Discrete Semiconductor Products |
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Allicdata Part #: | NDS8852HTR-ND |
Manufacturer Part#: |
NDS8852H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 30V 8SOIC |
More Detail: | Mosfet Array N and P-Channel 30V 4.3A, 3.4A 1W Sur... |
DataSheet: | NDS8852H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A, 3.4A |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 15V |
Power - Max: | 1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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NDS8852H is an Enhanced Low-Side Load Switch which is based on an N-channel power MOSFET in a 4x4mm size Quantum Threshold voltage (VTH). It is used as a switch to control DC/DC outputs, power rails and/or signals in system level applications including computers, laptops, mobiles, tablet PCs, or car audio applications.
The NDS8852H is designed to replace standard discrete power MOSFET solutions. It allows the designer to convert from discrete solutions to a complete compact low-noise solution that offers improved protection, superior thermal characteristics, overvoltage protection and other features.
The NDS8852H offers multiple performance benefits. Its low on-resistance and low voltage drop rating make it ideal for applications where power efficiency is most important. It has an input voltage range of 3V to 5.5V and an output current of up to 60A. The total power dissipation range of the device is from 0.5W to 2W and its maximum off-resistance is only 0.05Ω.
The underlying principle of operation of NDS8852H is the enhancement mode of a MOSFET with the gate source voltage higher than the threshold voltage. When the logic level at the enable input of the NDS8852H is low, the gate source voltage is below the threshold voltage and the switch is turned off, preventing current flow through the MOSFET. When the voltage at the enable input of the NDS8852H is high, the gate source voltage is above the threshold voltage and the switch is turned on, allowing current to flow through the MOSFET.
The NDS8852H can be used in a wide variety of applications, from automotive to consumer electronics, and from portable consumer electronics to power management. It is highly suitable for the protection of sensitive loads, overload protection and high current DC/DC buck or boost regulation. In automotive applications, it can be used in various powertrain control, engine control and safety systems. It is also suitable for low-voltage DC/DC applications such as power supply, standby power and microcontroller power. In consumer applications, it can be used for mobile signal switching, overvoltage protection, supply control and more. For example, it can be used for power-on reset, controlling circuit breaker, signal routing, protecting from static discharge, etc.
NDS8852H is an ideal solution for applications requiring high efficiency, low current consumption and low EMI radiation. Its high-performance features and cost-efficient design make it a suitable choice for system level applications in automotive, industrial, consumer and other markets.
The specific data is subject to PDF, and the above content is for reference
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