NDS8947 Discrete Semiconductor Products |
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Allicdata Part #: | NDS8947TR-ND |
Manufacturer Part#: |
NDS8947 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 30V 4A 8-SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 4A 900mW Surfa... |
DataSheet: | NDS8947 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 4A |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 690pF @ 15V |
Power - Max: | 900mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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NDS8947 is an advanced array type FET (Field Effect Transistor) that was designed to provide improved electrical performance and design flexibility. This device is produced with an array of elements connected together in parallel. The NDS8947 is a high-speed power MOSFET device with low on-resistance and fast switching times. It is suitable for use in audio, video, power, RF, and other applications.
The NDS8947 uses a metal oxide semiconductor (MOS) technology to produce an array of individually-controlled elements. The elements are connected in parallel, allowing higher current flow and greater power handling capabilities. The device has an adjustable gate voltage and threshold voltages with a range of 0.2V to 6V. The device can be used to drive a wide variety of loads, including loads with low impedance requirements.
The NDS8947 can be used in a variety of applications, such as high-speed drivers and relays. It can also be used in power management designs, such as DC-DC converters and DC motor control circuits. It is also used in audio, video, and power amplifier applications. The device can be used for low voltage and high voltage applications, and can handle a variety of power levels.
The NDS8947 offers several features that make it an ideal choice for a variety of applications. It has a low on-state resistance, which helps to reduce power losses due to heating. The device also has a wide operating temperature range, which allows for operation in a variety of environmental conditions. The device also has a low gate charge, which helps to reduce the overall cost of the design. The device also has low switching losses, which help to reduce overall design costs and maximize efficiency.
The NDS8947 utilizes a metal oxide semiconductor (MOS) technology which allows for the construction of an array of individually-controlled elements. The elements are connected in parallel, allowing higher current flow and greater power handling capabilities. The device has adjustable gate voltage and threshold voltages with a range of 0.2V to 6V, allowing the device to handle a variety of loads. The device is designed to be simple to use and operate, allowing designers to efficiently integrate it into their designs.
In conclusion, the NDS8947 is a high-performance power MOSFET device with low on-resistance and fast switching times. It can handle a wide range of power levels and is suitable for use in a variety of applications. The device is simple to use and offers several features that help to reduce design costs and power losses. The NDS8947 is an ideal choice for designers looking for a reliable, efficient and cost-effective power management solution.
The specific data is subject to PDF, and the above content is for reference
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