NDS8410 Allicdata Electronics

NDS8410 Discrete Semiconductor Products

Allicdata Part #:

NDS8410TR-ND

Manufacturer Part#:

NDS8410

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 10A 8-SOIC
More Detail: N-Channel 30V 10A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: NDS8410 datasheetNDS8410 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Vgs (Max): 20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 15 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NDS8410 is a MOSFET, or Metal-Oxide-Semiconductor Field Effect Transistor, designed for use in the power section of appliances, motors, and other high power applications. It is designed to withstand large voltage and current fluctuations, making it suitable for high power applications. In addition, it offers a high efficiency and low noise operation. It is also exceptionally robust, making it ideal for high temperature and other demanding applications.

The NDS8410 is a single-channel MOSFET. It offers two basic operative states: on and off. When a voltage is applied to the gate of the device, it is switched on. As the voltage is increased, the conduction becomes more efficient, allowing more current to flow through the NDS8410. In the off state, the gate is left untouched, or the voltage is reduced until the transistor is no longer conducting any current.

The advantages of using the NDS8410 in various applications come from the following features. It is able to provide a continuous drain to source current of up to 100 A, and a peak drain current of up to 200 A. This makes it well-suited to applications that involve controlling high current loads. It also has a high breakdown voltage rating of 7 V, which further enhances its ability to withstand surges and spikes of power.

The NDS8410 also has extremely low gate capacitance, which allows it to respond quickly to changes in voltage. This helps to reduce the interval between switching on and off, allowing for a more efficient operation. It also offers a low current leakage between the drain and the source, ensuring that power is not wasted.

The NDS8410 is a versatile device, suitable for many power applications. It is well suited for applications that require high efficiency and low noise operation, such as switching power supplies, motor controls, and other applications. It is also suitable for making power switching components, as it offers a strong electrical and thermal resistance.

The NDS8410 is a state of the art MOSFET that provides excellent performance in many power applications. Its combination of high current and voltage tolerance, low gate capacitance, and low current leakage make it an ideal choice for many power applications. Its robust design and reliable nature also make it a great choice for many demanding applications that require high performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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