NDS8435 Discrete Semiconductor Products |
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Allicdata Part #: | NDS8435TR-ND |
Manufacturer Part#: |
NDS8435 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 7A 8-SOIC |
More Detail: | P-Channel 30V 7A (Ta) Surface Mount 8-SO |
DataSheet: | NDS8435 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 15V |
FET Feature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Description
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The NDS8435 is a type of single MOSFET that can be used to amplify and switch high voltages and currents. It has a wide range of applications in areas such as power supplies, solid state relays, and various kinds of signal processing circuits. The NDS8435 is a three terminal device consisting of a Source, a Drain, and a Gate. The application range of the NDS8435 is generally determined by its breakdown voltage which is the maximum voltage it can withstand without damage. This breakdown voltage is typically rated at 800 volts. The maximum drain current that it can handle is also determined by its maximum drain to source voltage which is usually 500 volts. The input impedance of the NDS8435 is usually higher than its on resistance, making it suitable for switching applications.When used for power amplifying applications, the NDS8435 can operate at frequencies up to 10 MHz, with a high output current up to 10A depending on the specific model. It can handle a maximum power dissipation of up to 30W with an appropriately designed heat sink which helps to ensure a safe maximum operating temperature.The typical working voltage of the NDS8435 is 3.2V to 10V, with a typical drain to source resistance of 0.2 ohms. The maximum voltage can be as high as 12V and the maximum current can be as high as 8A, but these should only be used in cases where the maximum power dissipation limit is not exceeded.The working principle of the NDS8435 is based on the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology, which uses a voltage applied to the Gate terminal to control the current flowing through the drain to source. When a positive voltage is applied to the Gate terminal, the Source and Drain of the NDS8435 become ‘on’ and allows current to flow through the device. The drain to source current will depend on the Gate voltage and the resistance of the device. When a negative voltage is applied to the Gate terminal, the Source and Drain will become ‘off’ and no current will flow through the device.The NDS8435 has many advantages such as a wide range of applications, fast switching times, and low power consumption. It is a reliable device that provides good performance and is suitable for a variety of power amplifying and switching applications. Its versatility and superior performance makes it a popular choice for many types of circuits and devices.The specific data is subject to PDF, and the above content is for reference
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