NDS8425 Discrete Semiconductor Products |
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Allicdata Part #: | NDS8425FSTR-ND |
Manufacturer Part#: |
NDS8425 |
Price: | $ 0.47 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 7.4A 8SOIC |
More Detail: | N-Channel 20V 7.4A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | NDS8425 Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.41972 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1098pF @ 15V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 7.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 7.4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NDS8425 is a single-gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Nexperia. The device is constructed using an advanced trench-gate process with a high peak current capability, low resistance and a low gate threshold voltage. NDS8425 has a drain-source breakdown voltage of 100V, which allows it to be used in a wide variety of applications.
NDS8425 is mainly used in motor control applications because of its robust design and wide range of features. The device provides a low on-state resistance of 40mΩ, and a low gate threshold voltage of 1.6V. This makes it ideal for driving high power load applications, such as motor control, power amplifiers and DC-DC converters. The device also has a fast switching speed of 1.2ns, which makes it suitable for high frequency applications.
NDS8425 is also commonly used in power management applications, such as DC-DC converters and power switches. The device has an operational temperature range of -55°C to +150°C, and a drain-source breakdown voltage of 100V. This makes it suitable for use in systems with high power requirements. In addition, the device has a fast switching speed of 1.2ns and a low gate threshold voltage of 1.6V, making it suitable for controlling high current flow quickly and accurately.
NDS8425 works on the same principle as all other MOSFETs. When a voltage is applied to the gate, an electric field is formed, which attracts electrons from the channel, allowing current to flow. The on-state resistance of the device is determined by the width of the channel and the amount of charge in it. The gate threshold voltage is the voltage at which the channel is "opened" and current starts to flow.
NDS8425 is a versatile device that can be used in a wide range of applications. Its wide operational temperature range and low on-state resistance make it ideal for motor control and power management applications, while its fast switching speed and low gate threshold voltage make it suitable for controlling high current flow quickly and accurately.
The specific data is subject to PDF, and the above content is for reference
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