NDS8936 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	5.3A
Rds On (Max) @ Id, Vgs:	35 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id:	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	720pF @ 15V
Power - Max:	900mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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IntroductionNDS8936, also known as FET (Field Effect Transistor) arrays, are a type of MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) commonly used in many areas, from industrial automation and consumer electronics to automotive, communication, and medical applications. As the name suggests, these FETs are arranged in an “array” on an integrated circuit, giving them an advantage over single FETs in terms of space and cost savings. This article explains the basic components, working principle, and application fields of NDS8936.Components of an NDS8936The most basic components of an NDS8936 FET array include the control gate, source, drain, and substrate. The control gate is made up of a thin film of polycrystalline silicon, while the source and drain are the areas on the chip where electrons enter and exit the device. The substrate is made up of a very thin, insulating material that acts as the support for the other components.The control gate, source, and drain are then connected to the rest of the integrated circuit through several metal interconnects. These interconnects not only provide electrical connections but also act as heat sinks, allowing heat to dissipate. The substrate and metal interconnects are held in place by an adhesive material to keep the components from moving during operation.Working Principle of NDS8936 FETsNDS8936 FETs use the same principle of operation as any other MOSFETs. That is, in the presence of an electric field, electrons are allowed to flow from the source to the drain and then through the channel formed by the control gate. When the electric field strength is increased, the electrons move faster, thus allowing for greater amounts of current to flow through the device.The current gain of a FET is determined by the ratio of the drain current to the gate current. This ratio is known as transconductance, and is usually expressed as a ratio of amps per volt (A/V). FETs can also be used as voltage regulators or amplifiers, depending on the design of the device and the application.Application Fields of NDS8936NDS8936 FET arrays offer many advantages over traditional transistors, making them attractive in a variety of applications. These FETs are ideal for use in digital circuits, such as microprocessors and memory chips, as they have a low-noise operation and can provide a fast switching time. Additionally, FET arrays are excellent at providing gain and high inputs, making them suitable for use in radio frequency applications.Also, because these FETs are arranged in an array, they can be used for multiple purposes such as circuit protection, amplifying signals, and providing a stable reference voltage. This makes them very versatile, allowing them to be used in a wide range of applications from industrial automation and automotive to communications and medical uses.ConclusionNDS8936 FETs are an excellent choice for a wide range of applications, from industrial automation to medical applications. These FETs offer a number of advantages over traditional transistors, such as low-noise operation, fast switching time, and versatility. Additionally, FET arrays are a cost-effective solution that can be used for multiple purposes, making them a popular choice among engineers and designers.

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