NDS8435A Allicdata Electronics
Allicdata Part #:

NDS8435A-ND

Manufacturer Part#:

NDS8435A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 30V 7.9A 8-SOIC
More Detail: P-Channel 30V 7.9A (Ta) 2.5W (Ta) Surface Mount 8-...
DataSheet: NDS8435A datasheetNDS8435A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NDS8435A is a high voltage N-Channel Enhancement Mode MOSFET. It is a MOSFET family member in the NDS8435 series produced by Nexperia. This specific part is produced with the 5.0V logic gate and a number of useful features.

The NDS8435A is a single MOSFET with an advanced trench MOSFET technology. This technology allows it to achieve excellent combination of low on-resistance and fast switching speed. It has an excellent RDS(on) (which is the resistance of the MOSFET when it is in on-state) of 0.095 Ω @ 4.5V, which makes it a perfect choice for powering high current applications. The low gate charge and fast switching speed of the NDS8435A make it ideal for high frequency switching applications.

The NDS8435A is commonly used in mobile devices, including smartphones and tablets. Due to its low cost and high performance, it is also popular in medical, automotive and industrial applications. One of the common uses of the NDS8435A is in switching power supplies, where it helps protect sensitive components from voltage fluctuations.

Most of the MOSFETs in the NDS8435 series are designed for applications that require low power and high efficiency. The low on-resistance of each device helps it to conduct more current without dissipating as much heat as a regular linear transistor. This feature makes the NDS8435A an excellent choice for various switching applications where heater efficiency and performance are critical.

The NDS8435A operates using the basic principle of a MOSFET. The device consists of several different layers, with the most important layer being the gate layer. This gate layer is used to control the current that flows through the channel. When a voltage of the same polarity as the gate voltage is applied to the drain terminal, it causes enhanced electron flow through the channel, allowing current to flow. When the opposite voltage is applied to the gate, it inhibits the electron flow, thus preventing current flow.

The NDS8435A is a versatile and reliable MOSFET that is suitable for a variety of applications. It has an extended drain-source voltage range, excellent thermal characteristics and a wide range of on-resistance values, making it an ideal choice for high frequency switching applications. Its fast switching speed and low gate charge also make it a great choice for power management and power conversion tasks. The NDS8435A is available with a choice of 6V, 9V or 12V gates, allowing engineers to quickly and easily identify the best option for their specific application. In addition, the wide range of packages, such as the TO-220, SOT-223 and DPAK, ensures that the NDS8435A can be used in whatever form-factor is best for a project.

The specific data is subject to PDF, and the above content is for reference

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