NDS8858H Discrete Semiconductor Products |
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Allicdata Part #: | NDS8858HTR-ND |
Manufacturer Part#: |
NDS8858H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 30V 8SOIC |
More Detail: | Mosfet Array N and P-Channel 30V 6.3A, 4.8A 1W Sur... |
DataSheet: | NDS8858H Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6.3A, 4.8A |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 4.8A, 10V |
Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 720pF @ 15V |
Power - Max: | 1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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NDS8858H Application Field and Working Principle
As an array of N-channel MOSFETs, the NDS8858H is designed to offer excellent performance from a small package. It features eight independent MOSFETs and utilizes the industry’s latest high-voltage process to reduce on-resistance, power loss and conduction losses. Its versatile design and high power density ensure superior performance in a wide range of circuit designs. This article looks at the application fields and working principle of the NDS8858H array.
Application Fields of NDS8858H
The NDS8858H is designed for applications as varied as motor control, switched-mode power supplies, audio amplifiers, relay drivers, H-bridge distributed power systems, high voltage switching, and more. Its excellent on-resistance and power density make it suitable for a wide range of power needs. Its 8-channel configuration is ideal for applications that need a high level of integration, such as high-precision motor control.
The NDS8858H can also be used in high-efficiency applications such as audio amplifiers, switched-mode power supplies, relay drivers, and H-bridge systems. It features anti-lightning technology to prevent overvoltage, ensuring stability even in severe ambient conditions. As a practical alternative to conventional ICs, the NDS8858H can also be used in embedded systems and distributed power systems.
Working Principle of NDS8858H
The NDS8858H uses an 8-channel HEXFET array to reduce Rds(on) values in high voltage circuits. Each of the 8 channels consists of two N-channel MOSFETs connected in parallel. This reduces the parasitic capacitances and minimizes the EMI emissions and inductive noise generated by switching devices. The reduced resistance and minimal EMI ensure that the NDS8858H offers superior performance in high-current circuits.
The NDS8858H features low on-resistance and fast switching times that enable it to act as an efficient and reliable power switch. Furthermore, its integrated ESD protection circuit ensures compliance to safety requirements. The low capacitance of the device also reduces the risk of failure due to ESD.
The NDS8858H is an ideal choice for applications that require a high level of integration, high-efficiency, and excellent performance in extreme ambient conditions. Its 8-channel configuration and high-voltage process make it perfectly suited for a wide range of power needs.
The specific data is subject to PDF, and the above content is for reference
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