| Allicdata Part #: | NP80N04KHE-E1-AY-ND |
| Manufacturer Part#: |
NP80N04KHE-E1-AY |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 40V 80A TO-263 |
| More Detail: | N-Channel 40V 80A (Tc) 1.8W (Ta), 120W (Tc) Surfac... |
| DataSheet: |  NP80N04KHE-E1-AY Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta), 120W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3300pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 8 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Last Time Buy |
| Packaging: | Tape & Reel (TR) |
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The NP80N04KHE-E1-AY is a N-channel type Trench MOSFET (or just MOSFET for short) made with Level-FET technology. This technology offers excellent switching performance with low gate charge and low on-state resistance. The MOSFET has been developed to achieve the S-class performance in power switching applications.
The NP80N04KHE-E1-AY is suitable for use in a myriad of applications. In particular, it can be used in a variety of motor control and high-frequency power conversion applications such as DC-DC converters, AC adapters, and other switchers. It is ideal for applications where low on-state resistance and fast switching speeds are required. It is also suitable for DC-DC converters in portable applications, battery powered systems and charger circuits.
The main features of the NP80N04KHE-E1-AY include the following: low drain-source on-state resistance; low gate charge; high forward transfer admittance; fast switching speeds and superior reliability. The MOSFET also has a low capacitance level, making it suitable for switching applications that require high speed.
The working principle of the NP80N04KHE-E1-AY is relatively simple. It is a type of field effect transistor (FET) that relies on the movement of electron charges to create a current when a voltage is applied to the gate. When the voltage is applied to the gate, an electric field is created in the gate region, which, in turn, attracts the electron charges and moves them through the channel region to the drain. This movement of electrons creates a current that can then be used to activate electronic components.
The NP80N04KHE-E1-AY has a wide range of applications. It is suitable for use in high-frequency power conversion circuits and motor control applications. It can also be used in DC-DC converters and AC adapters, as well as other switching applications. Moreover, it is suitable for use in battery powered systems and charger circuits, as well as portable applications due to its low on-state resistance and fast switching speeds. With its superior reliability, low gate charge and fast switching speeds, the NP80N04KHE-E1-AY is a great choice for a range of power switching applications.
The specific data is subject to PDF, and the above content is for reference
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