NP80N04PLG-E1B-AY Discrete Semiconductor Products |
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| Allicdata Part #: | NP80N04PLG-E1B-AYTR-ND |
| Manufacturer Part#: |
NP80N04PLG-E1B-AY |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 40V 80A TO-263 |
| More Detail: | N-Channel 40V 80A (Tc) 1.8W (Ta), 115W (Tc) Surfac... |
| DataSheet: |  NP80N04PLG-E1B-AY Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta), 115W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6900pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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NP80N04PLG-E1B-A is an advanced type of metal oxide semiconductor field effect transistor (MOSFET) that is usually used as an amplifier, switch or amplifier-switch combination in many circuits. MOSFETs are a type of three terminal semiconductor device that can be used to control the voltage and current levels in a circuit. The actual device is made up of three layers of metal - an oxidesemiconductor (MOS) between a metal gate and the substrate.
As with other MOSFETs, NP80N04PLG-E1B-A works by modulating the flow of electrons from the source to the drain. When the gate voltage is below a certain threshold, the transistor is in its "off" state, and no current can flow through the device. When the gate voltage is above the threshold voltage, current can flow through the device between the source and the drain, allowing the device to function as an amplifier, switch, or amplifier-switch combination. The most common applications of the NP80N04PLG-E1B-A are motor control, power switching and audio amplification.
The NP80N04PLG-E1B-A uses a new process technology called "Storm CellTech". This advanced technology enables the MOSFET to provide superior performance than other HEXFETs. The device has superior switch-mode power performance and requires lower gate charge for increased efficiency and high current switching capability. Additionally, the device utilizes unique multi-finger cells for reduced resistance and improved thermal conductivity.
The device also has a very low "on" resistance (Rdson) which means that it can switch large currents with minimal power loss. It is also an excellent choice when used as an amplifier because it has a high input impedance (HiZ) which allows it to provide higher levels of linearity and signal fidelity. Finally, the device has a wide temperature range, making it suitable for use in extreme environments.
The NP80N04PLG-E1B-A is an excellent choice for many applications due to its superior performance, low power loss, and excellent signal fidelity. It is well-suited for use in motor control, power switching and audio amplification circuits. Additionally, the wide temperature range makes it suitable for use in extreme environments.
The specific data is subject to PDF, and the above content is for reference
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