NP80N06PLG-E1B-AY Discrete Semiconductor Products |
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| Allicdata Part #: | NP80N06PLG-E1B-AYTR-ND |
| Manufacturer Part#: |
NP80N06PLG-E1B-AY |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 60V 80A TO-263 |
| More Detail: | N-Channel 60V 80A (Tc) 1.8W (Ta), 115W (Tc) Surfac... |
| DataSheet: | NP80N06PLG-E1B-AY Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta), 115W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6900pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 128nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 8.3 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The NP80N06PLG-E1B-AY belongs to a range of N-channel enhancement mode field-effect transistors, or FETs, offered by ON Semiconductor. It enables the high efficiency, low total cost of ownership required in numerous applications. It is capable of offering common source current handling capabilities up to 80 A with an on-resistance ranging from three to five volts and a power dissipation up to 150 W.
This particular FET is widely used in inverters, motor and load control, power converters, and other systems or applications that require high efficiency and reliability.Also, it is a common choice for industrial control systems, intelligent power supplies, and a range of other industrial components and systems such as LED drivers and switch mode power supplies.
The working principle behind the design of the NP80N06PLG-E1B-AY FET is quite simple. The FET is constructed from an electrically conductive material, such as a semiconductor material, surrounded by an electrical insulator. When an external voltage is applied to the FET, the positive and negative charges are attracted to the insulator, and the electric field generated causes the current flow between the drain and source terminals.
The electric field generated by the applied voltage is the key factor responsible for the efficient operation of the FET.The gate terminal acts as an electrical control that allows or blocks the flow of current between the drain and source terminals based on the voltage applied. This makes the FET ideal for a wide range of applications that require high efficiency and/or low power consumption.
The NP80N06PLG-E1B-AY provides a wide range of advantages that makes it suitable for a variety of applications. It has a low on-resistance rating, the ability to handle high currents, a rugged construction, and a wide range of operating voltages.It also features a low RDS(on) and low gate charging times. These features make it ideal for applications requiring high power throughput and high efficiency.
The FET can also be used in applications requiring circuit protection and fault detection. Its high current carrying capacity, low voltage rating, and wide operating range all make it suitable for protecting circuits from current overloads and detecting faults in systems.The NP80N06PLG-E1B-AY is also a common choice in motor control and automotive applications, allowing for efficient and smooth operation.
Overall, the NP80N06PLG-E1B-AY is an excellent choice for a wide range of applications that require high efficiency, low power consumption, and reliable performance. Its simple working principle, rugged construction, and wide operating voltage range all make it one of the most popular FETs available in the market.
The specific data is subject to PDF, and the above content is for reference
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NP80N06PLG-E1B-AY Datasheet/PDF