NP80N04PUG-E1B-AY Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263
Mounting Type:	Surface Mount
Operating Temperature:	175°C (TJ)
Power Dissipation (Max):	1.8W (Ta), 115W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7350pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	135nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	4.5 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The NP80N04PUG-E1B-AY is a type of transistor. Transistors are solid-state electronics components consisting of three or more terminals, typically used as switches or amplifiers of small signals. They are then divided into further categories, with the NP80N04PUG-E1B-AY falling into the category of Field Effect Transistors (FET), specifically, the subcategory of Metal Oxide Semiconductor Field Effect Transistors (MOSFET) which are further split into Single FETs. Single FETs—such as the one considered in this article—feature only one FET channel in their structure and are normally used for low-power applications. They have become increasingly popular due to their several advantages over traditional bipolar junction transistors for signal amplification and digital switch applications; these advantages include lower power dissipation, simple control of the signal with the use of a gate voltage, high input impedance and no need for a heat sink.The NP80N04PUG-E1B-AY is specifically a depletion N-channel MOSFET. Simply put, the device will allow current to flow from its source to its drain when the gate-source voltage (VGS) is more positive than the threshold voltage (Vth) while the voltage across the drain and the source (VDS) is less than the rated value. In other words, the NP80N04PUG-E1B-AY will open and close its channel depending on the VGS and VDS applied. It is also linear, meaning its response is a linear function of its inputs. The device is also low-power enough to be used in portable and battery powered applications, such as mobile phones, laptop computers and tablets. Its low on-resistance characteristic allows higher current to be handled without the need of dissipating lots of heat. In addition, the NP80N04PUG-E1B-AY features an integrated reverse diode for protection, as FETs don\'t have an inherent protection mechanism as bipolar junction transistors do. In conclusion, the NP80N04PUG-E1B-AY is a low-power FET, specifically a depletion N-channel MOSFET. It is used in low-power applications where current needs to be switched on and off. It features an integrated reverse diode for protection and can be used in mobile phones, laptops and tablets, among other applications. Its low on-resistance characteristic allows higher current to be handled without the need of dissipating lots of heat. Overall, the NP80N04PUG-E1B-AY is a versatile transistor, capable of being used in a wide range of applications that require the switching of currents. Its advantages over traditional bipolar junction transistors range from better power consumption to ease of use, making it an ideal choice in low-power applications.

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