NP80N055KLE-E1-AY

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The NP80N055KLE-E1-AY transistor is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from ON Semiconductor, part of the VIPower family. This transistor is a single N-channel enhancement-mode device, meaning that it can be used either as an amplifier, switch or driver by electrically modifying the gate of this device, allowing for a current flow through it.

This device has multiple useful qualities which make it suitable for a wide variety of applications. It has a very low input capacitance (Ciss) of 13 pF to allow for faster switching speeds, and a low resistance source drain between both frequencies of 1.2 and 25 kHz. In addition, the NP80N055KLE-E1-AY features a very low drain-source on-resistance (Rds) of 0.055 Ohms, ensuring a very low heat generation. This makes the NP80N055KLE-E1-AY suitable for applications where power consumption must be kept low.

The N-channel MOSFET is particularly known for its use as a switch in electric circuits, as it allows current to flow from its source to its drain when switched on. It works this way by allowing the passage of electrons through the “channel” formed in between the source and the drain when a voltage is applied to the gate. This can be done by placing a voltage controller such as a transistor, IC or a resistor in series to the gate.

The NP80N055KLE-E1-AY can be used in power switching applications such as in low-voltage distribution boards, any kind of automation systems, chargers, and in motion control circuitry. This transistor can also be used as a load switch, pulse shaper and current regulator. In addition, this MOSFET is well-suited for when high switching speeds are required, as well as when high commutation speed and high current inrush suppression is necessary.

The NP80N055KLE-E1-AY offers excellent reliability and is guaranteed to operate in temperatures ranging from -50°C up to +150°C, making it suitable for automotive applications. In addition, this device is totally immune to both ESD (electro-static discharge) and latch-up effects. Finally, through the use of an efficient cooling solution, this transistor can safely support 3-phase bridge circuits with low-side output voltages up to 600V.

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