NP88N04KUG-E1-AY Allicdata Electronics
Allicdata Part #:

NP88N04KUG-E1-AY-ND

Manufacturer Part#:

NP88N04KUG-E1-AY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 40V 88A TO-263
More Detail: N-Channel 40V 88A (Tc) 1.8W (Ta), 200W (Tc) Surfac...
DataSheet: NP88N04KUG-E1-AY datasheetNP88N04KUG-E1-AY Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 44A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NP88N04KUG-E1-AY is a shallow trench isolation PG-D2 NFET transistor device. It is designed for consistent high-performance applications. It is a single N-channel device with a threshold voltage of -1.7V and a typical drain-source breakdown voltage of over 40V. The device has excellent RDS(on) performance, low gate charge and fast switching capability. It is also suitable for high frequency switching applications.

The application field of the NP88N04KUG-E1-AY is mainly in high-side and low-side, automotive and other harsh environment applications. It is specifically designed for applications where reliability and performance are essential, such as engine management, body control, and other automotive electronics. The device has proven to be successful in a variety of applications, from remote battery management systems to body control modules. Some of the features that make the device ideal for these applications include its low on-resistance, excellent gate charge, and low gate-to-source voltage.(Vgs)

The working principle of the NP88N04KUG-E1-AY is based upon the basic principle of a metal-oxide-semiconductor field-effect transistor. In a metal-oxide-semiconductor field-effect transistor, a metal electrode and a semiconductor material form a structure where an electric field can be applied. When an electric field is applied to the structure, it affects the conductivity of the semiconductor material, allowing it to act as a switch. The metal electrode is a gate, and the electric field that is applied to it is called the gate voltage (Vgd), which controls the flow of current between the gate and the source.

The important parameters that define the performance of the NP88N04KUG-E1-AY are the Vgs (gate-to-source voltage), Vgd (gate-to-drain voltage), and the RDS(on) (drain-to-source on-resistance). The device is optimized for high performance applications, where the on-resistance is the most critical factor. In addition, the low gate charge and fast switching characteristics make it ideal for high frequency applications such as PWM (pulse-width modulation) and other control applications.

The NP88N04KUG-E1-AY is an ideal choice for high-side and low-side automotive and other harsh environment applications. It is specifically designed for applications where reliability and performance are essential, such as engine management, body control, and other automotive electronics. The device has excellent RDS(on), low gate charge and fast switching characteristics that make it ideal for high frequency switching applications. Additionally, it is designed to withstand temperatures of up to 175°C, making it a reliable choice for harsh environment applications.

The specific data is subject to PDF, and the above content is for reference

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