| Allicdata Part #: | NP88N075KUE-E1-AY-ND |
| Manufacturer Part#: |
NP88N075KUE-E1-AY |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 75V 88A TO-263 |
| More Detail: | N-Channel 75V 88A (Tc) 1.8W (Ta), 288W (Tc) Surfac... |
| DataSheet: |  NP88N075KUE-E1-AY Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta), 288W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 12300pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 230nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 44A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 88A (Tc) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The NP88N075KUE-E1-AY is a part of ON Semiconductor’s enhanced family of N-channel MOSFETs having an extra-low RDSON and a wide range of input and output capacitances. It is specifically designed with an extra-low RDSON, resulting in a ‘green’ MOSFET, which can significantly reduce system power consumption. This device offers excellent switching performance for driving high-current loads, along with the technology to enable multiple-channel switching from a single power source.
The NP88N075KUE-E1-AY is a single-channel, N-channel MOSFET with a very low RDSON of 0.75 ohms. It has an ultra-high input and output current of 98mA and 12A, respectively. It has an enhanced threshold voltage of -2.1V to -1V, allowing the device to be operated in severe conditions. For engineering design and breakthroughs, this MOSFET comes with a breakdown voltage greater than 21V and an ESD protection of greater than 8kV.
The NP88N075KUE-E1-AY is mainly used in consumer electronics, such as cell phones, laptops, and other battery-powered devices. It can also be used in LED backlights, LCD displays, and automotive controllers. The device is also ideal for applications that need to minimize power consumption, such as solar cells, home appliances, and wearable devices.
The working principle of the NP88N075KUE-E1-AY involves an electro-static gate control. When the device is switched on, the gate of the MOSFET is activated. The resulting increase in the conductivity of the devices causes current to flow easily through the device, thus allowing loads to be switched on and off. When the device is switched off, the gate of the MOSFET is inactive and the device turns off due to the lack of current.
The NP88N075KUE-E1-AY is a versatile and powerful device for use in a variety of applications. It can help to reduce power consumption, enabling products to operate more efficiently. Its combination of ultra-low RDSON, large input and output current, and a high-voltage breakdown makes it ideal for applications in consumer electronics and automotive controllers.
The specific data is subject to PDF, and the above content is for reference
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