| Allicdata Part #: | NP88N055KUG-E1-AY-ND |
| Manufacturer Part#: |
NP88N055KUG-E1-AY |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 55V 88A TO-263 |
| More Detail: | N-Channel 55V 88A (Tc) 1.8W (Ta), 200W (Tc) Surfac... |
| DataSheet: |  NP88N055KUG-E1-AY Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta), 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 14400pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 250nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3.9 mOhm @ 44A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 88A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The NP88N055KUG-E1-AY is a P-channel metal-oxide-semiconductor field-effect transistor (MOSFET). It is an enhancement mode MOSFET. An enhancement mode MOSFET is one that powers on when its gate is connected to a voltage greater than the source voltage. It can thus be used as an electronic switch, for example to turn electrical circuits on and off, or act as a voltage regulator.
The NP88N055KUG-E1-AY has a drain-source voltage rating of 55V and a drain-source current of 88A. The on-resistance (RDSON) is low at 0.50μΩ, meaning it can pass up to 176W of power. The transistor is also fast switching, which allows it to operate quickly in switching applications.
TheNP88N055KUG-E1-AY has multiple applications. It can be used as an electronic switch, such as in power supplies, motor control and other similar applications. It can be used as a voltage regulator in applications such as wireless power supplies. It can also be used to switch high currents, enabling its use in motor control applications.
The working principle of the NP88N055KUG-E1-AY is simple. When a voltage greater than the source voltage is provided at the gate, it will turn on the transistor and allow a current to flow between the source and the drain. When the gate voltage is lower than the source voltage, the transistor is off and the current cannot flow. By providing the correct gate voltage, the transistor can be switched on and off, thus allowing it to control the current flow between the source and the drain.
In summary, the NP88N055KUG-E1-AY is a versatile P-channel MOSFET with a drain-source voltage rating of 55V and a drain-source current of 88A. Its low on-resistance (RDSON) and fast switching allows it to be used in a variety of applications such as power supply control, motor control, and voltage regulation. The workings of the transistor are based on the simple principle of applying a voltage greater than the source voltage to the gate to turn it on, and a voltage lower than the source voltage to turn it off.
The specific data is subject to PDF, and the above content is for reference
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