NP88N075MUE-S18-AY Allicdata Electronics
Allicdata Part #:

NP88N075MUE-S18-AY-ND

Manufacturer Part#:

NP88N075MUE-S18-AY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 75V 88A TO-220
More Detail: N-Channel 75V 88A (Tc) 1.8W (Ta), 288W (Tc) Throug...
DataSheet: NP88N075MUE-S18-AY datasheetNP88N075MUE-S18-AY Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 12300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 44A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NP88N075MUE-S18-AY transistor is an enhancement type, N-channel junction field effect FET with low on-resistance, high ruggedness, and low noise. It is an easy-to-use device for applications that require high switching capacity and high frequency operation. In this article, we\'ll review the application field and working principle of the NP88N075MUE-S18-AY device.

Application Field

The NP88N075MUE-S18-AY is well-suited for power management, audio and video equipment, computers and peripherals, automotive, portable electronics, and other applications. Power management applications such as boost and buck converters, power supplies, and inverters benefit from the low on-resistance and high ruggedness of this device. Audio and video equipment can use the NP88N075MUE-S18-AY for load switching and voltage boosting. Computers and peripherals can make use of its high switching capacity for motor and fan speed control. Automotive applications include motor control, driver’s side window switch, and power supplies. The portable electronics market also stands to benefit from the device’s wide acceptable operating temperature range and low noise feature.

Working Principle

The NP88N075MUE-S18-AY is an enhancement type N-channel MOSFET. This type of device has a low conductance when the gate-source voltage (VGS) is equal to or below the threshold voltage (VTH). When VGS is increased above VTH, the channel resistance of the device decreases. This type of device is also known as an "enhancement device" because the channel is "enhanced" by increasing the VGS above VTH, allowing current to flow.The NP88N075MUE-S18-AY employs the latest process technology to achieve a low on-resistance, high ruggedness, and low noise. It also has high switching capabilities allowing it to operate at high frequencies while providing protection against transient electrostatic discharge.The NP88N075MUE-S18-AY provides protection against gate-source voltage, body diode reverse voltage, and reverse drain-source voltage. It can also be used for capacitor-free and low capacitance circuit topologies.

Conclusion

The NP88N075MUE-S18-AY is an excellent choice for a wide variety of applications including power management, audio and video equipment, computers and peripherals, automotive, portable electronics, and other applications. Its low on-resistance, high ruggedness and low noise make it a great choice for these applications. Additionally, its high switching capacity allows for operation at high frequencies while providing necessary protection against transient electrostatic discharge.

The specific data is subject to PDF, and the above content is for reference

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