NP88N04NUG-S18-AY

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262
Mounting Type:	Through Hole
Operating Temperature:	175°C (TJ)
Power Dissipation (Max):	1.8W (Ta), 200W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	15000pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	250nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3.4 mOhm @ 44A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	88A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IntroductionThe NP88N04NUG-S18-AY is a mosfet device manufactured by NXP Semiconductor, and belongs to the same power mosfet family. It is a single transistor device with dual N-channel type. This device is used to provide fast switching logic (FET) with low-on resistance and higher current capability than other FETs.ApplicationsThis NXP Semiconductor MOSFET can be used in various applications such as power electronics, communications and networking, industrial automation, and medical instrumentation. It can be used in line-switching applications for power control and is often used for high frequency switching in power supply and data converter applications. In addition, it is ideal for DC-to-DC conversion, voltage regulation, and level shifting applications.FeaturesThe NXP Semiconductor\'s NP88N04NUG-S18-AY has a number of features that make it a unique addition to any project. These features include: an ultra low gate charge (Qg) of 3 pF, an ultra low drain-source on resistance (RDS(on)) of 4 mΩ, an avalanche energy guaranteed safe operating area for higher performance, and an integrated surface mount packaging for easier board mounting.Working PrincipleMOSFETs operate using the principle of a field-effect transistor (FET). When a voltage is applied between the gate and source terminals, an electric field is created. This electric field creates an inversion layer between the gate and the source terminal that modulates the current between the drain and source terminals. By this concept, an n-channel MOSFET is capable of controlling a vast amount of current by the application of a very small voltage.The NP88N04NUG-S18-AY is an n-channel type of device and the most commonly used type in most applications. This mosfet is controlled by a voltage applied to the gate terminal, which is connected to the source terminal and the drain terminal. Due to its low on resistance, it is able to switch on very quickly when voltage is applied or removed from the gate terminal, allowing for very fast switching logic.ConclusionThe NXP Semiconductor\'sNP88N04NUG-S18-AYis a highly versatile single transistor device designed for fast switching logic with low on resistance and higher current rating than comparable FETs in the same family. It has various applications in the fields of power electronic, communications and networking, industrial automation, and medical instrumentation. Working on the principle of FETs, it is able to control a great amount of current by the application of a small voltage between the gate and source terminal. This makes it ideal for sensitive current control applications.

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