NSB8AT-E3/45 Allicdata Electronics
Allicdata Part #:

NSB8AT-E3/45-ND

Manufacturer Part#:

NSB8AT-E3/45

Price: $ 0.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 50V 8A TO263AB
More Detail: Diode Standard 50V 8A Surface Mount TO-263AB
DataSheet: NSB8AT-E3/45 datasheetNSB8AT-E3/45 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.34866
Stock 1000Can Ship Immediately
$ 0.39
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: NSB8A
Description

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Diodes are an essential part of modern electronics, as they are used in many different applications. The NSB8AT-E3/45 is a rectifier diode specifically designed for use in high-efficiency power supplies and automatic protection circuits. This device is made up of two main components: an N-channel Rectifier and an E-type reactor. The N-channel Rectifier is a type of junction barrier between the anode and cathode which regulates the flow of current. The E-type reactor adds an extra layer of protection by providing an electromagnetic barrier that limits the flow of current. This ensures that the diode can operate in high-efficiency power supplies without being overloaded.

The NSB8AT-E3/45 is a single-phase, high-efficiency power supply device. It is commonly used in applications such as power supplies, UPS systems, inverters, and other power regulation products. The device operates by allowing only a single direction of current flow from anode to cathode. This is different from other diodes which allow for both directions of current, making this diode better suited for certain applications. Additionally, its high temperature range, low forward voltage drop, and high reverse recovery times make it suitable for use in a wide variety of applications.

The working principle behind the NSB8AT-E3/45 is relatively simple. When a voltage is applied to the anode, the current will flow through the device, while the reverse current will be blocked. This is the same process used in almost all other diodes, but the NSB8AT-E3/45 is designed to offer better performance. The main difference is that the N-channel Rectifier adds an extra barrier which limits the intensity of the current flowing into the E-type reactor. This reduces the chances of the diode being overloaded, increasing its efficiency. Additionally, the E-type reactor limits the draw of any reverse current, further increasing the device’s efficiency.

The NSB8AT-E3/45 is a great device for many applications, as it offers a high level of efficiency and reliability. It is a popular choice for many industries, as it is capable of handling various voltage and current levels safely. This device is also the popular choice for many power regulation products, as it is capable of handling a wide range of voltage and current levels with minimal loss of power. The combination of an N-channel rectifier and an E-type reactor makes the NSB8AT-E3/45 an ideal device for many applications, including power supplies, UPS systems, and inverters.

The specific data is subject to PDF, and the above content is for reference

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NSB8GT-E3/81 Vishay Semic... 0.43 $ 1000 DIODE GEN PURP 400V 8A TO...
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NSB8DTHE3_A/P Vishay Semic... 0.46 $ 1000 DIODE GEN PURP 200V 8A TO...
NSB8GTHE3_A/P Vishay Semic... 0.53 $ 1000 DIODE GEN PURP 400V 8A TO...
NSB8JTHE3_A/P Vishay Semic... 0.46 $ 1000 DIODE GEN PURP 600V 8A TO...
NSB8KTHE3_A/P Vishay Semic... 0.53 $ 1000 DIODE GEN PURP 800V 8A TO...
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NSB8ATHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 50V 8A TO2...
NSB8BTHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 100V 8A TO...
NSB8DTHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 200V 8A TO...
NSB8GTHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 400V 8A TO...
NSB8JTHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 600V 8A TO...
NSB8KTHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 800V 8A TO...
NSB8MTHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 1KV 8A TO2...
NSB8MT-E3/81 Vishay Semic... 0.53 $ 1000 DIODE GEN PURP 1KV 8A TO2...
NSB8JT-E3/81 Vishay Semic... -- 1000 DIODE GEN PURP 600V 8A TO...
NSB8ATHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 50V 8A TO2...
NSB8BTHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 100V 8A TO...
NSB8DTHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 200V 8A TO...
NSB8GTHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 400V 8A TO...
NSB8JTHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 600V 8A TO...
NSB8KTHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 800V 8A TO...
NSB8MTHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 1KV 8A TO2...
NSB8ATHE3/45 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 50V 8A TO2...
NSB8BTHE3/45 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 100V 8A TO...
NSB8DTHE3/45 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 200V 8A TO...
NSB8GTHE3/45 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 400V 8A TO...
NSB8JTHE3/45 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 600V 8A TO...
NSB8KTHE3/45 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 800V 8A TO...
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