Allicdata Part #: | NSB8KTHE3/45-ND |
Manufacturer Part#: |
NSB8KTHE3/45 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 800V 8A TO263AB |
More Detail: | Diode Standard 800V 8A Surface Mount TO-263AB |
DataSheet: | NSB8KTHE3/45 Datasheet/PDF |
Quantity: | 1000 |
0 +: | $ 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 8A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 800V |
Capacitance @ Vr, F: | 55pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | NSB8K |
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Diodes are semiconductor elements with unidirectional nonlinear current-voltage characteristics. The unilateral conduction of diodes enables them to act as rectifiers and protectors in many electronic circuits. A single diode, such as the NSB8KTHE3/45, is a semiconductor component with unidirectional conduction capacity, suitable for use in high voltage power electronic systems.
The NSB8KTHE3/45 is a high power component designed for use in high voltage power electronic applications. It is a single rectifier with a maximum reverse-voltage rating of 8kV, and a maximum forward current of 40A. It also has an impressive junction-temperature range of -40 to +170°C, suitable for use in harsh environment. The diode is housed in a 2-pin DO-35 glass package, and includes a metal pin and metal plate for excellent electrical and thermal stability in operation.
The NSB8KTHE3/45 is designed with a low capacitance, which allows it to achieve high switching frequency and reduce switching losses. Its low forward voltage drop provides high efficiency and low dissipation. This component also provides excellent current capability and low leakage current, which makes it well suited for brushless DC motor applications, as well as other applications where improved current gain is required.
The working principle of the NSB8KTHE3/45 component can be explained as follows.When a forward bias is applied to the device, shown as the anode on the schematic diagram, electrons in the semiconductor material of the component are attracted to the anode, creating a region of negative charge inside the semiconductor material. The electrons then spread out through the device and draw a path of current with minimal resistance. As the electrons approach the cathode in the device, they become immobilized due to the force of the applied voltage. This stops the electrons from being able to continue travelling into the diode and forms a positive charge vicinity in the material of the NSB8KTHE3/45.
The use of a reverse voltage in the NSB8KTHE3/45 will cause no current to flow between their recognized connections. When a reverse voltage is applied, electrons in the cathode material of the device are repelled and spread away from the region towards the anode material. This creates a positive dome effect in the area around the anode. The positive charge created will force a negative charge to be established around the cathode, avoiding the current between these two terminals. The two regions of charge combined create a strong blocking effect that prevents the current from travelling from the anode to the cathode.
The NSB8KTHE3/45 is a versatile component thanks to its wide range of applications in high voltage power electronic systems. This device can be used for rectification, low capacitance switching, motor control protection and soft-start protection. It can also be used to improve efficiency, reduce heat, and increase current gain in applications such as Uninterruptible Power Supplies (UPS), AC-DC Converters, and DC-DC converters.
In conclusion, the NSB8KTHE3/45 is an ultra-high reverse voltage single rectifier ideal for use in high-voltage power electronic applications. It features a low capacitance, low forward voltage drop and low leakage current, allowing it to provide excellent current capability and improved efficiency. The reverse voltage blocking capability of this diode provides excellent protection in applications where current must be maintained at a preset level. This device is well suited for use in motor control, Uninterruptible Power Supplies, AC-DC converters and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NSB8AT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BT-E3/45 | Vishay Semic... | 0.34 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DT-E3/45 | Vishay Semic... | 0.34 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8JT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KT-E3/45 | Vishay Semic... | 0.34 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8AT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DT-E3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8KT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8ATHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3_A/P | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3_A/P | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8ATHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8MT-E3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8JT-E3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8ATHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8ATHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
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