NSB8ATHE3/81

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	50V
Current - Average Rectified (Io):	8A
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 8A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr:	10µA @ 50V
Capacitance @ Vr, F:	55pF @ 4V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263AB
Operating Temperature - Junction:	-55°C ~ 150°C
Base Part Number:	NSB8A

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Introduction

Diodes are electronic components used to allow the flow of current in only one direction through a device or circuit. Rectifiers are a type of diode specifically designed to convert alternating current (AC) to direct current (DC) through the process of rectification. Single rectifiers have the ability to convert AC to DC and may use an additional PN junction or feedback loop to achieve this. The NSB8ATHE3/81 is a rectifier diode made by NXP Semiconductor, and it is commonly used in various applications that require an effective and efficient diode for converting AC to DC. This article will discuss the application field and working principle of the NSB8ATHE3/81.

Application Field of NSB8ATHE3/81

The NSB8ATHE3/81 is designed primarily for general use in power conversion applications. More specifically, it can be used in AC/DC rectification, LED lighting, solar panel applications, and many other areas where the need for efficient rectification is required. The device is designed to withstand high temperature operation with a maximum working temperature of 150°C, making it suitable for use in harsh environment applications. The NSB8ATHE3/81 rectifier also offers low forward voltage drop due to its low dynamic forward voltage drop, which can be advantageous for applications where power is to be conserved. The device also features a fast switching time with a maximum forward recovery time of 50 ns and a maximum reverse recovery time of 25 ns, allowing it to switch from one state to another quickly and efficiently.

Working Principle of NSB8ATHE3/81

The NSB8ATHE3/81 rectifier is based on a PN junction diode, a fundamental element used for rectification. The diode is constructed from a P-type semiconductor material and an N-type semiconductor material which are placed in contact with each other. When an electric field is applied across the PN junction it creates an electric barrier, or diode barrier, which only allows current to flow in one direction. When an AC current is applied to the input of the device, the voltage across the device oscillates between positive and negative. The diode only permits current flow in one direction at any given time, depending upon which voltage (positive or negative) is of a higher magnitude at that instance. In this way, the device converts the alternating current (AC) into a pulsating direct current (DC). Although the NSB8ATHE3/81 rectifier is based on the same PN junction principle as any other rectifier, the device itself is more efficient at converting AC to DC because it uses a unique design, specially formulated materials and an additional feedback loop which allows the device to switch from one state to another faster than other rectifier diodes. This increases the overall efficiency of the device and reduces power losses due to switching.

Conclusion

The NSB8ATHE3/81 rectifier is an efficient and durable device made by NXP Semiconductor which is designed for general use in power conversion applications. The device is designed to withstand high temperatures, has a low dynamic forward voltage drop and a faster switching time than other rectifiers, making it suitable for a variety of applications. At its core, the device is based on the PN junction diode principle, though its extra feedback loop allows the diode to switch from one state to the other faster, resulting in an overall increased efficiency.

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