Allicdata Part #: | NSB8JTHE3_A/P-ND |
Manufacturer Part#: |
NSB8JTHE3_A/P |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 8A TO263AB |
More Detail: | Diode Standard 600V 8A Surface Mount TO-263AB |
DataSheet: | NSB8JTHE3_A/P Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.41675 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 8A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 55pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes - Rectifiers - Single
When it comes to engineering, there are often times when electrical components need to be used where the voltage needs to be regulated or where currents need to be balanced between two different sources. One such component that is often used in such tasks is known as the NSB8JTHE3_A/P. This is a diode, or rectifier, which can be used to alter the voltage and current levels between two different sources. In this article, we’ll be exploring the application field and working principle of the NSB8JTHE3_A/P.
Application Field
The NSB8JTHE3_A/P is a single diode and rectifier and is typically used in two distinct application fields. The first of these is where the NSB8JTHE3_A/P is used to reduce the voltage in a power system. When power is supplied to a device, it is typically exposed to a higher voltage level than it needs in order to work properly. By using the NSB8JTHE3_A/P, the voltage is dropped to a more desirable level for the device, and the sensitive components are not exposed to the higher voltage.
The other primary application field for the NSB8JTHE3_A/P is the protection of sensitive components from the higher voltages. By using the diode, the current, and thus the voltage, can be regulated and maintained at a lower level. This is important, as the higher voltage could potentially damage the more sensitive components in the system.
Working Principle
The working principle of the NSB8JTHE3_A/P is rooted in the physics of electricity and the theory of electron flow. To begin, electrons will naturally flow from the anode or positive pole to the cathode or negative pole. When the diode is used, the electrons will be prevented from flowing in the opposite direction. This creates a one-way passage for the electrons, allowing the voltage across the NSB8JTHE3_A/P to be regulated at a lower level.
As the current flow moves through the diode, its resistance will increase. This causes the voltage to drop. The voltage dropped across the diode is proportional to the amount of current flowing through it. This makes the NSB8JTHE3_A/P useful for applications where the voltage needs to be regulated, such as when protecting sensitive components.
Another useful feature of the NSB8JTHE3_A/P is its ability to withstand high temperatures. This allows the diode to be used in more demanding applications, where higher temperatures are more commonly encountered.
Conclusion
The NSB8JTHE3_A/P is an incredibly useful electronic component that has multiple applications in the field of engineering. With its ability to regulate voltage levels, it is often used to protect sensitive components in electrical systems, as well as to reduce voltages in order to operate devices at their optimal level. It features a one-way current flow, as well as the ability to withstand high temperatures. The NSB8JTHE3_A/P is certainly an invaluable component for any engineer looking to build robust and reliable systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NSB8AT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BT-E3/45 | Vishay Semic... | 0.34 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DT-E3/45 | Vishay Semic... | 0.34 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8JT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KT-E3/45 | Vishay Semic... | 0.34 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8AT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DT-E3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8KT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8ATHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3_A/P | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3_A/P | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8ATHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8MT-E3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8JT-E3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8ATHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8ATHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
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