NSB8ATHE3_A/P Allicdata Electronics
Allicdata Part #:

NSB8ATHE3_A/P-ND

Manufacturer Part#:

NSB8ATHE3_A/P

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 50V 8A TO263AB
More Detail: Diode Standard 50V 8A Surface Mount TO-263AB
DataSheet: NSB8ATHE3_A/P datasheetNSB8ATHE3_A/P Datasheet/PDF
Quantity: 1000
1000 +: $ 0.41675
Stock 1000Can Ship Immediately
$ 0.46
Specifications
Series: Automotive, AEC-Q101
Packaging: Tube 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes are semiconductor devices that allow current to flow in one direction but not the other. A rectifier is a type of diode that converts alternating current (AC) to direct current (DC). A single diode rectifier is a diode that is used to rectify a single phase AC voltage. The NSB8ATHE3_A/P is a high-efficiency, low-loss single diode rectifier which is specially designed for high power rectification applications. This article will discuss the application fields and working principle of the NSB8ATHE3_A/P single diode rectifier.

NSB8ATHE3_A/P rectifiers can be used in a wide range of applications needing high power rectification. They are often used in the power supplies of medical equipment, base stations, radios, instrumentation, and other electronic devices. The NSB8ATHE3_A/P rectifier has a wide operating range of -40 degrees Celsius to +125 degrees Celsius and can handle up to 7 amps of current. It is also available in various package sizes including TO-220, TO-252, and SMD.

The working principle of a single diode rectifier is based on the fact that a diode acts as an insulator to an electric current when biased in one direction and a conductor when biased in the opposite direction. When a single phase AC voltage is applied to it, the diode will conduct current only during the positive half cycle. During that time, the diode will behave like a conductor and allow current to flow through it. During the negative half cycle, the diode will behave like an insulator and not allow current to flow. This results in the AC voltage being converted to a single phase, DC voltage.

The NSB8ATHE3_A/P single diode rectifier has a unique construction which allows it to rectify higher powers than other single phase rectifiers. This is due to its multi-chip construction which allows each phase to operate in different directions and therefore handle higher currents and voltages. In addition, the device is constructed from high-temperature silicon which enables it to handle even higher temperatures than other devices.

The NSB8ATHE3_A/P single diode rectifier also features low loss and high efficiency. This is due to its high-purity silicon design which reduces losses and increases efficiency. In addition, the device has a low forward voltage drop which allows it to handle high currents without losing efficiency. This makes it ideal for applications where high power is required.

In conclusion, the NSB8ATHE3_A/P single diode rectifier is a highly efficient, low-loss rectifier which is specially designed for high power rectification applications. It has a wide operating range and can handle high temperatures and currents. Its multi-chip construction allows it to rectify higher powers and its high-purity silicon design results in low losses and high efficiency.

The specific data is subject to PDF, and the above content is for reference

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NSB8DTHE3_A/P Vishay Semic... 0.46 $ 1000 DIODE GEN PURP 200V 8A TO...
NSB8GTHE3_A/P Vishay Semic... 0.53 $ 1000 DIODE GEN PURP 400V 8A TO...
NSB8JTHE3_A/P Vishay Semic... 0.46 $ 1000 DIODE GEN PURP 600V 8A TO...
NSB8KTHE3_A/P Vishay Semic... 0.53 $ 1000 DIODE GEN PURP 800V 8A TO...
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NSB8ATHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 50V 8A TO2...
NSB8BTHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 100V 8A TO...
NSB8DTHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 200V 8A TO...
NSB8GTHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 400V 8A TO...
NSB8JTHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 600V 8A TO...
NSB8KTHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 800V 8A TO...
NSB8MTHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 1KV 8A TO2...
NSB8MT-E3/81 Vishay Semic... 0.53 $ 1000 DIODE GEN PURP 1KV 8A TO2...
NSB8JT-E3/81 Vishay Semic... -- 1000 DIODE GEN PURP 600V 8A TO...
NSB8ATHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 50V 8A TO2...
NSB8BTHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 100V 8A TO...
NSB8DTHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 200V 8A TO...
NSB8GTHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 400V 8A TO...
NSB8JTHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 600V 8A TO...
NSB8KTHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 800V 8A TO...
NSB8MTHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 1KV 8A TO2...
NSB8ATHE3/45 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 50V 8A TO2...
NSB8BTHE3/45 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 100V 8A TO...
NSB8DTHE3/45 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 200V 8A TO...
NSB8GTHE3/45 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 400V 8A TO...
NSB8JTHE3/45 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 600V 8A TO...
NSB8KTHE3/45 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 800V 8A TO...
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