NSB8GTHE3_A/I

Diodes - Rectifiers - Single: NSB8GTHE3_A/I Application Field and Working Principle

The NSB8GTHE3_A/I, produced by ON Semiconductor, is a single Schottky Barrier rectifier with an average forward voltage of 900 mV, a static forward current of 8.00 A, and a surge forward current of 27.0 A. It is a 300 V silicon Schottky rectifier with a reverse recovery time of 70 ns, and it is suitable for automotive applications.

The NSB8GTHE3_A/I rectifier comprises of one N-type and one P-type semiconductor layer, which when connected in the forward bias condition, allow for the flow of electric current through the circuit. As compared to a traditional PN junction diode, the Schottky barrier rectifier has smaller forward voltage drop and faster switching speeds. This particular rectifier has a reverse leakage current of not exceeding 1.0 A at a reverse voltage of 300 V.

The NSB8GTHE3_A/I application field extends to rectifying of AC voltage to DC voltage, mainly in automotive applications. Its maximum peak repetitive reverse voltage is 300 V and continuous forward current is 8 A. This allows the device to be used in automotive equipment such as light or charging systems. The high surge current rating of 27 A also allows it to be used to protect against circuit failure due to over current.

In addition, the NSB8GTHE3_A/I rectifier can also be used for rectification of automotive headlights, dash lights, warning buzzers, power windows and air bags. Also, due to its low forward voltage drop (900 mv) and high efficiency the device is suitable for use in low voltage applications, such as battery charging.

Working Principle

When the NSB8GTHE3_A/I rectifier is inserted in the forward bias position, the current flows from the anode to cathode. The anode and cathode are two different semiconductor layers that sit on top of each other. The P-type semiconductor layer has a large number of electrons that enables it to accept current from the anode. The N-type semiconductor layer also has a large number of electrons but these electrons can only pick up current from the cathode. In the forward direction the current travels from the anode to the cathode, this is known as forward bias.

When the current changes its direction in the circuit, a reverse bias state is reached and the current flow is blocked. This is the working principle of the NSB8GTHE3_A/I rectifier. As the current flows in one direction it charges up the P-type and N-type semiconductor layers enabling them to quickly change their states when the direction of current reverses.

The fast switching capabilities of the NSB8GTHE3_A/I rectifier give it its advantages in some automotive applications. Its high surge current rating of 27 A can protect against circuit failure due to over current. Furthermore, its low forward voltage drop (900 mv) provides higher efficiency in the system. Finally, its reverse recovery time of 70 ns is fast enough to provide increased system performance.

Conclusion

The NSB8GTHE3_A/I rectifier is a single Schottky Barrier rectifier from ON Semiconductor. It offers a forward voltage drop of 900 mV, a static forward current of 8.00 A, and a surge forward current of 27.0 A. It is highly suitable for automotive applications, and its fast switching capabilities, high surge current rating and low forward voltage drop make it very efficient. Its application field extends to rectifying AC voltage to DC voltage, and the device can be used in automotive equipment such as light or charging systems, battery charging, and to protect against circuit failure due to over current.