NSB8BTHE3_A/I Allicdata Electronics
Allicdata Part #:

NSB8BTHE3_A/I-ND

Manufacturer Part#:

NSB8BTHE3_A/I

Price: $ 0.59
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 100V 8A TO263AB
More Detail: Diode Standard 100V 8A Surface Mount TO-263AB
DataSheet: NSB8BTHE3_A/I datasheetNSB8BTHE3_A/I Datasheet/PDF
Quantity: 1000
800 +: $ 0.52788
Stock 1000Can Ship Immediately
$ 0.59
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes - Rectifiers - Single

A single rectifier diode is an important electronic component with a wide variety of applications in different areas such as electrical engineering, electronics, and telecommunications. A rectifier diode is utilized as part of a circuit to enable electrons to flow in just one direction.

In particular, the single rectifier diode, also known as NSB8BTHE3_A/I, is an electronic device used to convert alternating current (AC) from an alternating voltage source into direct current (DC). Its main function is that of rectification, which refers to the conversion of the electrical energy into a unidirectional current. This type of diode is widely used in rectification circuits, where its purpose is to convert the alternating current into a current that flows only in one direction, usually to power up devices.

NSB8BTHE3_A/I is a single rectifier diode, meaning it is composed of only one semiconductor junction, as opposed to bi-directional diodes, which are composed of two junctions. This single junction is composed by two semiconductor materials, usually silicon, that are connected in a circular form and have different doping levels. The doping determines the amount of current-carrying electrons that can flow in the device and the materials used in the junction determine the voltage breakdown of the diode.

The NSB8BTHE3_A/I can handle currents up to 3A and withstand pressures up to 200V. It is considerably small, with a size of only 1.2x0.6x0.4mm, allowing it to fit in even the most compact circuits. This diode also has a very quick reverse recovery time and provides fast switching, which makes it ideal for applications that require minimal signal noise.

The principle of operation of a single rectifier diode is based on the fact that there is an electric field present at the junction of the two semiconductor materials. This electric field controls the flow of current through the diode, and it is determined by the doping process which was previously mentioned. When the applied voltage is higher than the electric field, the diode becomes conductive, allowing electrons to flow from the anode to the cathode. On the other hand, when the electric field is higher than the applied voltage, the diode becomes non-conductive, blocking the flow of current.

Most commonly, this type of diode is used as part of AC/DC converters, surge suppressers and voltage regulators. In these circuits, the diode acts as a bridge rectifier, converting the AC voltage that it receives into a DC voltage. As the diode acts as a unidirectional device, it is used to protect sensitive circuits and prevent damage caused by reverse current. Additionally, they can be used to protect against lightning strikes and power surges.

NSB8BTHE3_A/I is particularly useful due to its low voltage and current requirements, as well as its low recovery time. This makes it the ideal choice for projects that require a good combination of performance and cost. Its small size ensures that it can fit any circuit and its fast switching allows it to maintain a low level of noise in high-frequency applications. Additionally, the diode\'s durability and reliability make it a great choice for long-term projects.

In conclusion, NSB8BTHE3_A/I is an excellent choice for a variety of applications, including AC/DC conversion, surge suppression and voltage regulation. Its small size and fast switching time make it an ideal choice for projects where space is at a premium and noise needs to be kept to a minimum. Additionally, its durability and reliability make it a great choice for long-term projects.

The specific data is subject to PDF, and the above content is for reference

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NSB8GTHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 400V 8A TO...
NSB8JTHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 600V 8A TO...
NSB8KTHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 800V 8A TO...
NSB8MTHE3_A/I Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 1KV 8A TO2...
NSB8MT-E3/81 Vishay Semic... 0.53 $ 1000 DIODE GEN PURP 1KV 8A TO2...
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NSB8ATHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 50V 8A TO2...
NSB8BTHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 100V 8A TO...
NSB8DTHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 200V 8A TO...
NSB8GTHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 400V 8A TO...
NSB8JTHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 600V 8A TO...
NSB8KTHE3/81 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 800V 8A TO...
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NSB8BTHE3/45 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 100V 8A TO...
NSB8DTHE3/45 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 200V 8A TO...
NSB8GTHE3/45 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 400V 8A TO...
NSB8JTHE3/45 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 600V 8A TO...
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