Allicdata Part #: | NSB8DT-E3/81-ND |
Manufacturer Part#: |
NSB8DT-E3/81 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 8A TO263AB |
More Detail: | Diode Standard 200V 8A Surface Mount TO-263AB |
DataSheet: | NSB8DT-E3/81 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 8A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 55pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | NSB8D |
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Diodes - Rectifiers - Single
NSB8DT-E3/81 is one type of single rectifier diodes. Rectifier diodes are widely used in a lot of applications, such as rectifying, voltage clipping, freewheeling, and small signal switching, among many other. This article will discuss the application field and working principle of the NSB8DT-E3/81 diode.
NSB8DT-E3/81 Application Field
As mentioned before, rectifier diodes are widely used. The NSB8DT-E3/81 is typically used as a freewheeling diode, a voltage-clipping diode, and a switching element. It can also be used in a variety of power rectification, or ‘rectifying’ applications, such as rectifying AC line voltage or current. It is also suitable for high frequency applications.
The NSB8DT-E3/81 is capable of operating at voltages up to 200 volts and currents up to 1 ampere. It has a maximum repetitive peak reverse voltage (PRV) of 100 volts, which makes it suitable for a variety of power conversion, rectification, and clipping applications.
Its typical applications include motor control, DC-DC converters, inverters, commercial lighting, consumer electronics, and ac/dc power supplies. It is also compatible with silicon controlled rectifiers (SCRs) and can be used for controlling higher voltages.
NSB8DT-E3/81 Working Principle
The diode works in an analogous way to an electrical switch, with a forward-biased and reverse-biased potential forming the basis of its operation. When the voltage on either side of the diode exceeds the threshold, known as the breakdown voltage, the diode is said to have been ‘turned on’. In this mode, the diode is said to be forward biased, and conducts electricity. When the voltage falls again, the diode is said to be reverse biased, and no current can flow through it.
The exact behavior of the diode is determined by the characteristics of the material from which it is made. Silicon is the most commonly used material for the manufacture of diode rectifiers. As the temperature of the diode increases, the current carrying capacity decreases.
The large reversevoltages required for diode rectifiers to switch ON and OFF can be generated using a commutating capacitor, or commutator. This device is connected between two terminals, and when a voltage is applied to it, the transient current builds up in the capacitor, generating a voltage spike of the opposite polarity. This opposite polarity voltage is used to reverse the current flow in the diode, and the commutator returns the voltage to zero once it has reversed the current.
These commutators are often used in switchgear and rectifiers at high voltages and currents.
Conclusion
The NSB8DT-E3/81 is a single rectifier diode designed for power rectification and power conversion applications. Its low forward voltage drop and reverse voltage breakdown make it suitable for a variety of applications. The working principle of the diode revolves around the principle of forward-biased and reverse-biased potentials, and its behavior can be tailored using the commutating capacitor.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NSB8AT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BT-E3/45 | Vishay Semic... | 0.34 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DT-E3/45 | Vishay Semic... | 0.34 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8JT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KT-E3/45 | Vishay Semic... | 0.34 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8AT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DT-E3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8KT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8ATHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3_A/P | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3_A/P | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8ATHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8MT-E3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8JT-E3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8ATHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8ATHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
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