Allicdata Part #: | NSB8KT-E3/45-ND |
Manufacturer Part#: |
NSB8KT-E3/45 |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 800V 8A TO263AB |
More Detail: | Diode Standard 800V 8A Surface Mount TO-263AB |
DataSheet: | NSB8KT-E3/45 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.30423 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 8A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 800V |
Capacitance @ Vr, F: | 55pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | NSB8K |
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Diodes are a subset of electrical components that are used to regulate the flow of electric current, allowing it to flow only in one direction. Single rectifiers are a type of diode that is used to convert alternating current (AC) to direct current (DC). The NSB8KT-E3/45 is a single rectifier with a voltage of 800V and a current of 45A, making it suitable for many applications. In this article we will discuss the application fields and working principle of the NSB8KT-E3/45.
Application Fields of the NSB8KT-E3/45
The NSB8KT-E3/45 is suitable for applications that require high power and current, such as audio amplifiers, solar inverters, and LED drivers. Its 800V voltage rating makes it suitable for higher voltage applications, while its 45A current rating makes it suitable for high power applications. In addition, its small size and high efficiency make it suitable for applications where space is an issue.
The NSB8KT-E3/45 is also suitable for automotive applications, such as in power supplies, battery charging, and engine control. It is also suitable for motor control, such as in AC motors, servo motors, and brushless DC motors. The NSB8KT-E3/45 can be used in a variety of industrial applications, such as welding machines, UPS systems, and piping systems.
Working Principle of the NSB8KT-E3/45
The NSB8KT-E3/45 is a single rectifier diode with a maximum reverse recovery time of 25ns and a maximum surge forward current of 75A. The diode can convert AC to DC at up to 800V and 45A. A single rectifier consists of an anode and a cathode, which are connected to the alternating current source. When a voltage is applied to the anode, electrons flow from the anode to the cathode, allowing current to flow through the diode. The current will flow in one direction only, from the anode to the cathode. The diode will block any current flowing from the cathode to the anode.
When the AC voltage reaches a certain level, the diode will begin to conduct. This is called the peak forward voltage or PIV. At the PIV, the diode will begin to conduct and the current will reach its peak level. At this point, the diode will switch from blocking current to conducting current. As the voltage from the source continues to rise, the current will reach its maximum level and then begin to decrease. As the voltage from the source continues to decrease, the current will continue to decrease until it reaches zero.
The NSB8KT-E3/45 is a fast switching diode with a reverse recovery time of 25ns. This means that it can quickly switch from blocking current to conducting current and stay in a conducting state for a longer period of time. The fast switching speed makes the NSB8KT-E3/45 suitable for applications where high speed operation is required.
In Conclusion
The NSB8KT-E3/45 is a single rectifier diode with a voltage rating of 800V and a current rating of 45A making it suitable for applications that require high power and current. It is suitable for many applications, such as audio amplifiers, solar inverters, LED drivers, automotive applications, motor control, and industrial applications. Its fast switching speed and reverse recovery time of 25ns make it suitable for applications where high speed is required.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NSB8AT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BT-E3/45 | Vishay Semic... | 0.34 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DT-E3/45 | Vishay Semic... | 0.34 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8JT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KT-E3/45 | Vishay Semic... | 0.34 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8AT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DT-E3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8KT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8ATHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3_A/P | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3_A/P | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8ATHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8MT-E3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8JT-E3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8ATHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8ATHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
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