Allicdata Part #: | NSB8MTHE3/45-ND |
Manufacturer Part#: |
NSB8MTHE3/45 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 8A TO263AB |
More Detail: | Diode Standard 1000V 8A Surface Mount TO-263AB |
DataSheet: | NSB8MTHE3/45 Datasheet/PDF |
Quantity: | 1000 |
0 +: | $ 0.00000 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 8A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 1000V |
Capacitance @ Vr, F: | 55pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | NSB8M |
Description
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NSB8MTHE3/45 Diodes - Rectifiers - Single Application Field and Working PrincipleDiodes - Rectifiers - Single are a type of device used in electrical and electronics applications as a switch or rectifier. They consist of a two-terminal, one-directional element, and play an important role in voltage regulation, power conversion, and signal transmission. Within the Diodes - Rectifiers - Single family, NSB8MTHE3/45 is an ultra fast recovery rectifier with a low forward voltage drop and high surge current capability. These components are typically used in a range of applications in consumer electronics, automotive, lighting and photography, as they are able to handle large current and provide fast response in power supplies and AC/DC converters.The NSB8MTHE3/45 is a type of rectifier, which is a device used to reverse the direction of current flow. It is composed of a PN junction and it has two terminals, an anode, and a cathode. When the anode of the diode is subjected to a voltage that is more positive than the voltage at the cathode, a current will flow from one terminal to the other. However, when the anode is subjected to a voltage that is less positive than the cathode, the direction of current is reversed and the current does not flow. This type of behavior is known as rectification, and is the main purpose of the device.The NSB8MTHE3/45 is a high power rectifier that is ideal for applications that require high current handling and fast switching. The device is capable of handling very large currents and provides short recovery time. It also has a low forward voltage drop, meaning that less power is lost as a result of the circuitry. The diode\'s high current handling and fast switching are highly beneficial for applications requiring a high degree of power efficiency, such as lighting and AC/DC converters.The NSB8MTHE3/45 can also be used in automotive applications to regulate voltage and current levels. It is typically used in voltage regulators for fuel injection systems, electric power steering and other automated systems. The device’s low forward voltage drop also makes it suitable for automotive alternators, electric starters, and alternator regulators.Moreover, the device can be used in consumer electronics such as televisions, computer monitors and audio devices. Its fast switching and low forward voltage drop ensure that these applications operate efficiently and provide clean power output. Additionally, the diode can be used in applications where a low reverse breakdown voltage and fast response are required, such as in telecommunications and medical equipment.In summary, the NSB8MTHE3/45 is a type of diode rectifier which is ideal for applications requiring high power handling, fast switching and low forward voltage drop. The device can handle high currents, providing efficient power conversion, fast response time and low power losses. It can be used in a variety of application fields, including automotive, consumer electronics, medical equipment, lighting and photography.
The specific data is subject to PDF, and the above content is for reference
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NSB8AT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BT-E3/45 | Vishay Semic... | 0.34 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
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NSB8KT-E3/45 | Vishay Semic... | 0.34 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8AT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DT-E3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8KT-E3/81 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8ATHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3_A/P | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3_A/P | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MTHE3_A/P | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8ATHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MTHE3_A/I | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8MT-E3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8JT-E3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8ATHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
NSB8MTHE3/81 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
NSB8ATHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
NSB8BTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
NSB8DTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
NSB8GTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
NSB8JTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
NSB8KTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
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