NSVMMUN2113LT3G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	246mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)

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NSVMMUN2113LT3G transistors, also known as single pre-biased transistors, are a type of bipolar junction transistors (BJT). These types of transistors are often used in various applications, most commonly in low-noise amplifiers, due to their low noise figure characteristic and the ability to operate in the linear operating region for increased stability. Additionally, these transistors are commonly used in sensing, controlling and actuating electro-mechanical devices.In order to understand the application fields and working principle of the NSVMMUN2113LT3G transistors, one must have a basic understanding of what a transistor is, and how it works. A transistor is an electronic device that functions as a switch, allowing current to flow through it in two directions. It is typically constructed from two p-type and n -type semiconductor materials, referred to as the base and collector. The current flow that is allowed to occur is determined by the amount of bias voltage applied to the base. This means that when a higher bias voltage is applied, the current flow will be increased, and vice versa. The NSVMMUN2113LT3G transistors are specifically designed to be operated in the linear operating region, which refers to the point on the characteristic curve that has minimal saturation. This is advantageous as it provides greater device stability and accuracy, while also enabling them to be used in low-noise applications. Additionally, the NSVMMUN2113LT3G transistors are pre-biased, meaning they have a voltage already applied to their base, and therefore require minimal oscillation circuit to achieve steady state operation and improved linearity. One of the most common applications for NSVMMUN2113LT3G transistors is in low-noise amplifiers. In these applications, the low-noise characteristic and the ability to operate in the linear operating region allows for the circuit to be more stable and accurate. Additionally, the pre-biased nature of the transistor enables it to operate with minimal oscillation circuit, increasing linearity and efficiency. Another application that the NSVMMUN2113LT3G transistors are used for is in sensing, controlling, and actuating electro-mechanical devices. In these applications, the pre-biased transistors are used to control the current flow in the circuit and consequently the amount of force applied to the device. This allows them to be used in a variety of applications, such as powering motors, controlling pressure, and adjusting light sources. Finally, the NSVMMUN2113LT3G transistors are also used in analog-to-digital converters and Analog-to-Pulse Width Modulation (PWM) converters. In these applications, the transistors are used to process analog signals into more manageable digital signals, by amplifying the input signal and then converting the amplified signals into either a digital or PWM signal. This allows them to be used in audio and video applications, where the processed signal is then used to control a display device. In conclusion, the NSVMMUN2113LT3G transistors are a type of pre-biased transistors that are commonly used for a variety of applications, most notably in low-noise amplifiers, sensing, controlling, and actuating electro-mechanical devices, analog-to-digital converters, and Analog-to-Pulse Width Modulation (PWM) converters. Their pre-biased nature allows them to operate with minimal oscillation circuit, enabling them to be more stable and accurate, while also providing them with greater efficiency.

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