Allicdata Part #: | NSVMUN5332DW1T3G-ND |
Manufacturer Part#: |
NSVMUN5332DW1T3G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN/PNP 50V SC88 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | NSVMUN5332DW1T3G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05414 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 385mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
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The NSVMUN5332DW1T3G is a device designed to control the flow of current in high power applications. It is a pre-biased array of Bipolar Junction Transistors (BJTs) with a wide operating range and fast switching speed.
The device is constructed of an array of eight BJTs and provides high power handling capabilities along with increased flexibility and control. The pre-biased nature of the device allows for easy integration into existing circuitry, helping to reduce design complexities. The NSVMUN5332DW1T3G has also been designed to provide exceptional thermal dissipation and ruggedness, making it an ideal choice for industrial and automotive applications.
The operating range of the NSVMUN5332DW1T3G is from 3V to 30V, enabling the device to be used in a variety of applications. The device also features a very wide output current range of up to 8A. This wide range makes the NSVMUN5332DW1T3G well suited for controlling loads such as motors, solenoids, and other high power applications. It has also been designed to handle high switching frequency, making it suitable for high performance digital circuitry as well.
The NSVMUN5332DW1T3G utilizes a “base-collector-emitter” configuration to effectively control the flow of current. Generally speaking, this configuration works by allowing a base current to be applied to the BJT, which in turn causes the current to flow from the collector to the emitter. Through this configuration, the NSVMUN5332DW1T3G is able to switch currents of up to 8A, depending on the current limit at which it is pre-biased by default. In applications where it is necessary to use higher current switching, the device can be pre-biased to adjust for higher current handling.
The device is designed to operate up to 250MHz, making it suitable for applications ranging from low frequency control to high frequency digital circuits. Additionally, the NSVMUN5332DW1T3G has been designed to optimize its current sinking capabilities and has an unusually low on-state resistance of 3.2 Ohms. This low resistance makes the device very efficient in terms of power consumption.
The NSVMUN5332DW1T3G is an ideal device for applications requiring high current handling capabilities and increased flexibility and control. Its wide operating range and fast switching speed make it suitable for both industrial and automotive applications. The device’s pre-biased nature allows for easy integration into existing circuitry, helping to reduce design complexities. With its exceptional thermal performance, ruggedness, and low on-state resistance, the NSVMUN5332DW1T3G is an ideal solution for design engineers needing to effectively control the flow of current in demanding applications.
The specific data is subject to PDF, and the above content is for reference
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