NSVMMUN2114LT3G

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	246mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)

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NSVMMUN2114LT3G is a pre-biased single bipolar junction transistor (BJT) specifically designed for low-noise and low-power applications such as amplifiers, microwave circuits, and consumer electronics. It is part of NXP’s advanced HITFET® technology family of field-effect transistors. HITFET technology provides several key advantages over other available BJT solutions, including low-noise operation, high-temperature stability, and improved power efficiency. Remarkably, these performance benefits are achieved with no trade-off in gain, which is an important factor for applications that require moderate-to-high gain.The NSVMMUN2114LT3G is primarily designed for low-noise amplifiers (LNAs) in such wireless systems as mobile phones, wireless local area networks (Wall’s), wireless cable TV systems, and wireless data terminals. It offers superior performance in terms of both AC and DC characteristics.When it comes to the AC characteristics, the NSVMMUN2114LT3G offers low-noise gain and superior linearity, even at higher capacitive loads or at frequencies as high as 3GHz. The device is highly immune to thermal noise and provides excellent output power levels up to 30dBm.The DC characteristics of the NSVMMUN2114LT3G are equally impressive, with an exceptional safe operating area (SOA). This SOA provides superior protection against device over-stress conditions, thus enabling more reliable operation. Also, the device has a high input impedance and low operating current. This results in improved efficiency and better power saving capability.The working principle of the NSVMMUN2114LT3G transistor is based on the hitfet technology that NXP has developed over many years. This technology utilises a PN junction, which effectively works like a vertical MOSFET with its source connected to the substrate. Bias for this PN junction is provided directly to the vertical MOSFET, thereby eliminating any need for an external bias network. This makes the NXP NSVMMUN2114LT3G a very simple and reliable device that is ideal for low-noise and low-power applications such as those found in amplifiers and microwave circuits.Moreover, the NSVMMUN2114LT3G also has a built-in temperature sensor, which helps to monitor and control the system temperature in order to prolong device lifetime and help mitigate thermal effects caused by high device current levels. Additionally, the hitfet technology provides improved immunity to external noise sources such as cell phone transmissions, as well as improved output power efficiency at higher frequencies.In summary, NSVMMUN2114LT3G is a pre-biased single bipolar junction transistor (BJT) designed for low-noise and low-power applications in a variety of industrial and consumer electronics applications. The device is based on NXP’s hitfet technology, which offers several key advantages over other available BJT solutions such as low-noise, high-temperature stability, improved power efficiency, and high-frequency linearity. Additionally, the device offers superior protection against over-stress conditions due to its built-in temperature sensor, as well as improved immunity to external noise sources.

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