NSVMMBT5087LT1G Discrete Semiconductor Products

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The NSVMMBT5087LT1G is a single, NPN, silicon planar, medium power, transistor intended for use in general-purpose switching and amplifier applications, as well as cellular telephone, paging, and data communication systems. It is one type of bipolar junction transistor (BJT) and is also known as an NPN transistor.

A BJT is a solid-state device and is a type of current-controlled device, meaning that the current flowing through the transistor controls the current flowing through another part of the circuit. In this type of transistor, the base-emitter region acts as a diode junction, allowing current to flow through the transistor when a certain amount of energy is applied. The primary function of a BJT is to amplify current, and to switch from active to noninverting when a given control current is applied.

The NSVMMBT5087LT1G has a maximum current gain (hFE) of 500, a maximum collector current of 100 mA, and a maximum collector-emitter voltage (Vce) of 40V. It is designed for operating temperature ranges of -65 to 150°C, and a maximum power dissipation of 625 mW. Other key parameters of the device include a transition frequency (fT) of 100 MHz, a base-emitter voltage (VBE) of 1.5V, and a collector-emitter saturation voltage (VCEsat) of 0.1V.

The NSVMMBT5087LT1G can be used in a variety of applications, including amplifier and switching circuits, motor control systems, and voltage regulators. It is well-suited for use in low power analog and digital systems, where its low noise and switching speed make it an ideal choice. Its high gain and low current gain give it exceptional performance when used in environments with high ambient temperatures or high voltage switching. The device is also used in cellular phones and data communication systems, where its strong noise immunity and small size make it a great choice for high density communication systems.

The working principle of the NSVMMBT5087LT1G is based on the fact that when an electric current flows through its base-emitter region, it allows the base-collector junction to be reversed biased. This causes the current flow from the collector to the emitter to increase, thus amplifying the current. When a current is applied to the base-emitter junction, a large current can be amplified through the collector-emitter region of the transistor.

The NSVMMBT5087LT1G also has an internal programmable gain circuitry, allowing it to be used in a variety of applications with varying input levels and output gains. The device’s low standby current consumption of only 2 microamps helps to make it an ideal choice for low power applications. In addition, it features an on-chip thermal shutdown which helps to prevent damage caused by device overtemperatures. Overall, the NSVMMBT5087LT1G is a versatile, low power, and efficient transistor that is well-suited for a variety of applications.

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