NSVMMUN2235LT1G Discrete Semiconductor Products |
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| Allicdata Part #: | NSVMMUN2235LT1GOSTR-ND |
| Manufacturer Part#: |
NSVMMUN2235LT1G |
| Price: | $ 0.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PREBIAS NPN 0.246W SOT23-3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: |  NSVMMUN2235LT1G Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.04351 |
| 6000 +: | $ 0.03784 |
| 15000 +: | $ 0.03216 |
| 30000 +: | $ 0.03027 |
| 75000 +: | $ 0.02838 |
Specifications
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 2.2 kOhms |
| Resistor - Emitter Base (R2): | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 246mW |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
Description
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The NSVMMUN2235LT1G is a transistor that falls under the category of single, pre-biased bipolar junction transistors (BJTs). It is a small, hybrid pre-bias single BJT device that has bothan NPN and PNP transistors in a standard leaded SOT-23 package. Specifically, it has an NPN and a PNP in one structure with an isolated base connection. This transistor is designed for dual control applications such as automatic gain control, noise canceling, and multiple switch arrays. It is a state of the art device providing advantages such as integrated pre-bias resistors and low on-capacitance. NSVMMUN2235LT1G transistors offer extremely low bidirectional offset voltage (approximately 0.5mV typ) and superior thermal stability. Additionally, these transistors can be used in bothanalog and digital circuits and have excellent performance characteristics including high frequency operation and low power consumption. The primary application for the NSVMMUN2235LT1G is in automatic gain control and noise canceling applications. This is due to its two bipolar transistors being coupled together with a base resistor and an emitter resistor that is designed to match to a given application set point. In these applications, using the NSVMMUN2235LT1G provides a level of stability that cannot be achieved with discrete components and allows users to maintain constant gain control with minimal manual adjustment. The working principle behind the NSVMMUN2235LT1G is based on a two stage circuit concept. In this circuit, the two transistors in the package are coupled together via two resistors and the base and emitter connections, respectively. This provides a voltage divider circuit that allows for greater control on the gain of both transistors. The transistor\'s operating characteristics also help to reduce distortion and temperature drift by maintaining a high input impedance and low output impedance. This, in turn, allows the transistors to remain in a stable condition. Additionally, due to the pre-biased resistor design, the transistors are better able to match the application\'s set point, which reduces the need for manual adjustment. Overall, the NSVMMUN2235LT1G provides superior performance, stability, and flexibility in a convenient package. This makes it an ideal choice for applications requiring automatic gain control, noise canceling, and other similar applications.
The specific data is subject to PDF, and the above content is for reference
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