NSVMUN5212DW1T1G Allicdata Electronics

NSVMUN5212DW1T1G Discrete Semiconductor Products

Allicdata Part #:

NSVMUN5212DW1T1GOSTR-ND

Manufacturer Part#:

NSVMUN5212DW1T1G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.25W SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: NSVMUN5212DW1T1G datasheetNSVMUN5212DW1T1G Datasheet/PDF
Quantity: 1000
1 +: $ 0.05000
10 +: $ 0.04850
100 +: $ 0.04750
1000 +: $ 0.04650
10000 +: $ 0.04500
Stock 1000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Base Part Number: MUN52**DW1T
Supplier Device Package: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Series: --
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NSVMUN5212DW1T1G is one of the most versatile transistors for numerous applications. It is a pre-biased transistor array which combines NPN and PNP transistors in a single package. This type of transistor is favored for use when rapid switching of high current is needed. The NSVMUN5212DW1T1G is also popularly used in applications where size and weight must be kept to a minimum.

The NPN transistors of the NSVMUN5212DW1T1G are designed to supply the base current necessary for the PNP transistors to operate correctly. This pre-bias helps to stabilize classic biasing configurations. It also means that the components needed for setting up the circuit can be reduced, thus reducing the size and cost of the end product.

The pre-biased NSVMUN5212DW1T1G provides high-speed current switching and features low saturation voltage. It also provides high-gain performance, which is essential in many applications. It is an ideal choice for amplifier design and linear applications.

The NSVMUN5212DW1T1G array has a +25V maximum supply voltage and can be used in both single and split power supply applications. It also has a wide range of operating temperatures. It is packaged in an ultra-small 4.5x5.35mm thin quad flat no-leads (TQFN) package.

In terms of its working principle, the NSVMUN5212DW1T1G operates as a current amplifier when the current flowing through the collector is amplified by the base current. The gain of the amplifier is determined by the ratio of the collector current to the base current. In other words, the collector current is many times higher than the base current. This type of amplifier is commonly used in linear applications.

In terms of application fields, NSVMUN5212DW1T1G is primarily used in audio, video, and image-processing applications. It is also used in audio amplifiers and speech filters. Furthermore, it is a popular choice for motor control and power delivery applications, due to its high gain, speed and low saturation voltage. Other applications include clock and Data line driving, and medical diagnostics.

In conclusion, the NSVMUN5212DW1T1G is an ideal choice for a wide range of applications due to its high gain, speed and low saturation voltage. Its pre-biased configuration makes it well-suited for audio, video and image-processing applications, and it is also used in motor control and power delivery. This type of transistor array can be a great asset to any application requiring high-speed current switching, amplifier design and linear applications.

The specific data is subject to PDF, and the above content is for reference

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