NSVMMUN2133LT1G

Resistor - Base (R1):	4.7 kOhms
Supplier Device Package:	SOT-23-3 (TO-236)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Power - Max:	246mW
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Resistor - Emitter Base (R2):	47 kOhms
Series:	--
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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The NSVMMUN2133LT1G is a N-Channel Enhancement Mode MOSFET (metal oxide semiconductor field effect transistor) manufactured by Vishay•Dale. The NSVMMUN2133LT1G can be classified into the family of Transistors - Bipolar (BJT) - Single, Pre-Biased. It is a switching type MOSFET with an excellent on-state current rating. It is designed for power switching applications, such as motor-drive circuits and automotive applications. The NSVMMUN2133LT1G features a pre-biased gate, which is an advantage in many applications. This bias keeps the MOSFET in a predetermined on or off state, resulting in more efficient power switching. The NSVMMUN2133LT1G has a maximum drain-source voltage (Vds) rating of 30V and a maximum on-state drain current (Id) rating of 1.5A. It has a low on-state resistance (Rds(on)) of 0.037 ohms, making it ideal for low voltage, high current applications. Its total gate charge (Qg) is 4.2nC, giving it an impressive switching speed performance. In terms of its construction, the NSVMMUN2133LT1G consists of 3 layers: drain, source and gate. The source and drain are connected to the device body and metal contact on the other sides. The gate is connected to a metal contact or metal alloyed contact. The device is configured so that the current flows from the source to the drain. As far as its working principle is concerned, the NSVMMUN2133LT1G is a three-port element. When a voltage is applied to the gate, it creates an electric field that attracts electrons in the substrate. This creates a region of high electron density near the gate, called the inversion layer. The presence of this inversion layer creates a conductive channel between drain and source. This inversion layer is what allows current to flow from drain to source. When the voltage on the gate of the NSVMMUN2133LT1G is increased, the resistance of the conducting channel is increased, thus limiting the amount of current flow (this is known as negative resistance). When the voltage is reduced, the resistance of the conducting channel decreases, allowing more current to flow. This mechanism is what makes the NSVMMUN2133LT1G ideal for fast switching applications. In conclusion, the NSVMMUN2133LT1G is an efficient and robust transistor with a wide range of applications, from motor-drive circuits to automotive applications. Its pre-biased gate and wide range of electrical properties make it an excellent choice for power switching applications.

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