Allicdata Part #: | NSVMUN5133DW1T1G-ND |
Manufacturer Part#: |
NSVMUN5133DW1T1G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP BRT BIPO SOT363-6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | NSVMUN5133DW1T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06371 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
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The NSVMUN5133DW1T1G is a type of pre-biased bipolar transistor array. It is a commonly used semiconductor made up of two transistors, each having two terminals and attached to a third terminal. This type of transistor array is usually used in power electronic applications and is available in several variations, depending on the application.
A pre-biased bipolar transistor array is capable of controlling both current and voltage when the voltage drop across the device is significant. This means that when the input voltage is greater than the threshold voltage, the device will operate as a current source, allowing current to flow from one part to the other. Alternatively, when the voltage is less than the threshold, the device will operate as a voltage source and will allow current to flow from the output terminals. This makes the pre-biased bipolar transistor array an efficient way to regulate the current and voltage in an electronic circuit.
The NSVMUN5133DW1T1G is very versatile in its use. It can be utilized in many different types of applications, especially those involving power electronics. Some common uses include voltage regulators, DC-to-DC converters, switching regulators and power amplifiers. In addition, it can be used in circuits dealing with logic, pulse control, motor control, and in automotive and avionics for motor control and protection. It can even be used to perform modulation and demodulation in radio communications.
The NSVMUN5133DW1T1G is made up of two transistors, each with a base, collector and emitter. The base is the part of the transistor that receives the input voltage. The collector and emitter are responsible for controlling the voltage and current of the device. The device works by using the emitter and collector to control the current, while the base is used to control the voltage. Since the device has two transistors, it can act as either a current or voltage source.
The NSVMUN5133DW1T1G is primarily used in power electronic applications and is usually found in circuits that require a high level of current control or voltage regulation. It is also used in circuitry that requires a specific voltage level or requires both current and voltage control. The device is also very useful in logic and pulse control applications, as it can accurately control the voltage and current to achieve the desired results.
In the end, the NSVMUN5133DW1T1G is a great way to control both current and voltage in power electronic applications. It is a versatile device that can be used in many different types of circuits, from motor control and protection to radio communications. It is also a very efficient way to regulate current and voltage, ensuring that circuits are receiving the correct amounts of current and voltage. In addition, the device is easy to use and can be used in a variety of applications, making it an ideal and effective tool for controlling current and voltage in electronic circuits.
The specific data is subject to PDF, and the above content is for reference
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